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2EDR8258X

更新时间: 2024-04-09 19:01:35
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动
页数 文件大小 规格书
34页 4342K
描述
The EiceDRIVER? 2EDR8258X is a reinforced isolated gate driver IC for control over the mandatory s

2EDR8258X 数据手册

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EiceDRIVER2EDR8259H, 2EDRx259X, 2EDRx258X  
Dual-channel isolated gate driver ICs in 300 mil DSO package  
2 Functional description  
Table 7  
(continued) Logic for STP/DTC pin connected to GNDI via resistance RDTC  
Condition  
STP/DTC logic  
E, F  
The shoot-through protection pulls down the outputs OUTA, OUTB until one of the  
outputs goes low. At this point, afer the configured driver dead-time, the other  
output is allowed to go high  
2.5  
Gate driver outputs  
The rail-to-rail output stage realized with complementary MOS transistors is able to provide a typical 5 A  
sourcing and 9 A sinking peak current. The low on-resistance coming together with high driving current is  
particularly beneficial for fast switching of very large MOSFETs. With a Ron of 1 Ω for the sourcing pMOS and  
0.5 Ω for the sinking nMOS transistor the driver can in most applications be considered as a nearly ideal  
switch. The p-channel sourcing transistor enables real rail-to-rail behavior without suffering from the voltage  
drop unavoidably associated with nMOS source follower stages.  
In case of floating inputs or insufficient supply voltage not exceeding the UVLO thresholds, the driver outputs  
are actively clamped to the "low" level (GNDA, GNDB).  
2.6  
Fast active output clamping in UVLO conditions  
The Undervoltage Lockout (UVLO) ensures that the gate driver output is not operated if the supplies are below  
the UVLO thresholds. However, this is not sufficient to guarantee that the output of the driver is kept low.  
Transients or noise in the power stage may pull-up the output node of the driver and the gate voltage causing  
an unwanted turn-on of the switch; this is particularly critical in system using bootstrapping since, during start-  
up, the supply of the high-side channel is delayed, while the low-side MOSFET is already switching. In resonant  
topologies (as LLC), the half-bridge switching node may be pulled up afer the turn-off of the low-side switch.  
When the low-side MOSFET is turned on again, the high-side gate voltage increase induced by dV/dt event  
cannot be clamped by the driver RDSON,sink if the bootstrap supply is not yet available.  
With a fast output clamping circuit in the output stage, the driver ensures safe operation against output  
induced overshoots in all UVLO situations. This structure allows fast reaction and effective clamping of the  
output pins (OUTA, OUTB). The exact reaction time depends on the output supply (VDDA, VDDB) and on the  
output voltage levels; however, already for very low supply levels (~1 V), the active output clamp is able to react  
in some tens of ns.  
Undervoltage Lockout together with the output active clamping ensures that the outputs are actively held low  
in case of insufficient supply voltages.  
Table 8  
Logic table in case of insufficient bias power - INA, INB, DISABLE  
Inputs  
DIS  
Supplies  
Outputs  
INA INB  
VDD  
VDDA  
VDDB  
OUTA  
OUTB  
x
x
x
x
x
x
x
x
x
< UVLOVDDI,on  
> UVLOVDDI,on  
> UVLOVDDI,on  
x
x
L
L
L
L
L
< UVLOVDDI,on  
> UVLOVDDI,on  
< UVLOVDDI,on  
< UVLOVDDI,on  
Follows  
INA  
x
x
x
> UVLOVDDI,on  
< UVLOVDDI,on  
> UVLOVDDI,on  
L
Follows  
INB  
2.7  
CT communication and input to output data transmission  
A coreless transformer (CT) based communication module is used for PWM signal transfer between input and  
output. A proven high-resolution pulse repetition scheme in the transmitter combined with a watchdog  
timeout at the receiver side enables recovery from communication fails and ensures safe system shut-down in  
failure cases.  
Datasheet  
9
Rev. 1.4  
2023-10-30  

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