Datasheet > 2ED300C17-S

2ED300C17-S

更新时间： 2024-01-28 10:47:36

品牌	Logo	应用领域
EUPEC		驱动器双极性晶体管
页数	文件大小	规格书
32页	476K
描述
Dual IGBT Driver for Medium and High Power IGBTs

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技术参数
数据手册

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2ED300C17-S 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.68	Is Samacsys：	N
Base Number Matches：	1

2ED300C17-S 数据手册

Technical Information

EiceDRIVER^™2ED300C17-S

preliminary

4.1 Designations and symbols

C_ps

coupling capacity primary/secondary

R_SX

Reference resistor voltage setting

C_SS

C_sup

C_ies

C_{ies max}

C_SX

C_VCE

COM

coupling capacity sec. channel A to B

buffer capacitor

R_VCE

SSD

t_TD

V_{CE sat}trigger suppression

Soft Shut Down

IGBT input capacity

interlock delay time

max. admissible IGBT- Gate- capacity

reference capacitor for time setting

V_{CE sat}trigger suppression

reference point

t_{TD min}

t_BK

minimum interlock delay time

reactivating time

t_dif

transition time difference

minimal pulse suppression

short circuit time

t_md

duty cycle

t_P

Dynamic Voltage Rise Control

dynamic over-current detection

voltage slew rate

DVRC

DOCD

dv/dt

di/dt

EDFA

f_S

t_ref

reference time DOCD

t_sd

transition time SSD

t_sys

system transition times

signal transition time

current rise time

t_pd

logic external fault input

switching frequency

T_op

operating temperature

storage temperature

T_stg

max. admissible switching frequency

IGBT collector current

current draw DC-DC

f_{S max}

I_C

V_Level

V_DD

V_DC

V_iH

logic switching level

supply voltage electronics primary

primary DC/DC supply voltage

maximum voltage of the logic levels

switching threshold logic signals

signal input voltage

I_DC

current draw electronics

output peak current

I_DD

I_G

V_iHS

V_in

output peak current “On“

output peak current “Off“

Quiescent current

I_{G on}

I_{G off}

I₀

V_isol

V_{isol IO}

V_{isol 12}

V_{isol Su}

V_CE

isolation test voltage

isolation test input- output

isolation test output A- output B

surge test voltage input- output

IGBT collector- emitter voltage

IGBT saturation voltage

logic signal output current

output current of V_A;B±

summed average gate current

summed average output current

maximum primary current draw

peak output power

I_OC

I_out

|I_G| _AV

|I_out

V_{CE sat}

V_{CE stat}

V_ref

I_{DC max}

P_DC/DC

P_SSD

P_DD

V_{CE sat}monitoring reference voltage

reference voltage of the DOCD

power of the SSD resistor

driver power dissipation

maximum gate power dissipation

Max.IGBT gate charge at 15V

Gate resistor

Gate- Emitter voltage

V_GE

V_A;B+

V_A;B-

secondary positive voltage

secondary negative voltage

P_G

Q_G

R_g

R_{g min}

R_{g intern}

R_{g extern}

Minimum gate resistor

IGBT Chip internal gate resistor

IGBT external gate resistor

(Datasheet)

R_GE

Gate- Emitter resistor

R_SSD

Soft Shut Down resistor

Page 29

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