生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大集电极电流 (IC): | 30 A | 集电极-发射极最大电压: | 600 V |
配置: | 2 BANKS, DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 750 |
JESD-30 代码: | R-PUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2DI30MA050 | FUJI | Transistor |
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|
2DI30Z-100 | FUJI | POWER TRANSISTOR MODULE |
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|
2DI30Z-120 | FUJI | POWER TRANSISTOR MODULE |
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|
2DI50A120 | ETC | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 50A I(C) |
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|
2DI50A-120 | FUJI | Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy |
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|
2DI50A140 | ETC | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 50A I(C) |
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