生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-XUFM-X5 |
针数: | 7 | Reach Compliance Code: | unknown |
风险等级: | 5.83 | 最大集电极电流 (IC): | 50 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 100 | 最大降落时间(tf): | 2000 ns |
JESD-30 代码: | R-XUFM-X5 | 元件数量: | 1 |
端子数量: | 5 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 400 W | 最大功率耗散 (Abs): | 400 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 3000 ns |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 17000 ns | 最大开启时间(吨): | 3000 ns |
VCEsat-Max: | 2.8 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KD221205A7 | POWEREX |
功能相似 |
Power Bipolar Transistor, 50A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2DI50Z-140 | FUJI |
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POWER TRANSISTOR MODULE | |
2DI75A120 | ETC |
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2DI75A140 | ETC |
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2DI75D-050A | FUJI |
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POWER TRANSISTOR MODULE | |
2DI75D055A | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C) | |
2DI75D-055A | ETC |
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BIPOLAR TRANSISTOR MODULES Rating and Specifications | |
2DI75D100 | ETC |
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TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 75A I(C) | |
2DI75D-100 | FUJI |
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Power Bipolar Transistor, 75A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy | |
2DI75M-050 | FUJI |
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POWER TRANSISTOR MODULE |