Datasheet > 2DA2018

2DA2018

更新时间： 2022-09-15 20:23:13

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
5页	120K
描述
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

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2DA2018 数据手册

2DA2018

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-15

-12

-6

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Peak Pulse Collector Current

-500

-1

I_CM

Thermal Characteristics

Characteristic

Power Dissipation (Note 4) @ T_A= 25°C

Thermal Resistance, Junction to Ambient (Note 4) @ T_A= 25°C

Operating and Storage Temperature Range

Symbol

P_D

Value

150

Unit

°C/W

°C

833

R_θ

-55 to +150

T_J, T_STG

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

160

100

140

120

100

Single Pulse

(t) = r(t) * R

θJA

= 470°C/W

θJA

- T = P * R (t)

A θJA

Duty Cycle, D = t /t

= 833°C/W

0.0001 0.001 0.01 0.1

t₁, PULSE DURATION TIME (s)

Fig. 2 Single Pulse Maximum Power Dissipation

100 1,000

80 100 120 140 160

T_A, AMBIENT TEMPERATURE (

Fig. 1 Power Dissipation vs. Ambient Temperature

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 470°C/W

0.01

D = 0.01

P(pk)

D = 0.005

- T = P * R (t)

θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 3 Transient Thermal Response

2 of 5

www.diodes.com

October 2010

2DA2018

Document number: DS31823 Rev. 3 - 2

123 4 5

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