2SA1282

更新时间： 2024-02-03 23:29:09

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	162K
描述
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

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技术参数
数据手册

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2SA1282 技术参数

生命周期：	Contact Manufacturer	包装说明：	CYLINDRICAL, O-XBCY-T3
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	2 A	基于收集器的最大容量：	42 pF
集电极-发射极最大电压：	16 V	配置：	SINGLE
最小直流电流增益 (hFE)：	250	JESD-30 代码：	O-XBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	PNP	功耗环境最大值：	0.9 W
最大功率耗散 (Abs)：	0.9 W	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	80 MHz	VCEsat-Max：	0.3 V

2SA1282 数据手册

http://www.idc-com.co.jp

6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN

ꢀꢀKeep safety in your circuit designs !

・Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable,

but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury,

fire or property damage.Remember to give consideration to safety when making your circuit designs, with appropriate measures

such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction

or mishap.

ꢀꢀNotes regarding these materials

・These materials are intended as reference to assist out customers in the selection of the Isahaya semiconductor product

best suited to the customer's application, they do not convey any license under any intellectual property rights, or any other

rights, belonging to Isahaya Electronics Corporation or a third party.

・Isahaya Electronics Corporation assumes no responsibility for any damage, or infringement of any third-party rights, originating

in the use of any product data, diagrams,charts or circuit application examples contained in the materials.

・All information contained in these materials, including product data, diagrams and charts, represent information on products at

the time of publication of these materials, and are subject to change by Isahaya Electronics Corporation without notice due

to product improvements or other reasons. It is therefore recommended that customers contact Isahaya Electronics

Corporation or authorized Isahaya Semiconductor product distributor for the latest product information before purchasing a

product listed herein.

・The prior written approval of Isahaya Electronics Corporation is necessary to reprint or reproduce in whole or in part these

materials.

・If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is

prohibited.

・Please contact Isahaya Electronics Corporation or an authorized Isahaya Semiconductor product distributor for further

details on these materials or the products contained therein.

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中文翻译

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与2SA1282相关器件

型号	品牌	获取价格	描述	数据表
2SA1282-11-E	MITSUBISHI	获取价格	暂无描述
2SA1282-11-F	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A	ISAHAYA	获取价格	FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1282A-11-E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A-11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282AE	ISAHAYA	获取价格	暂无描述
2SA1282AF	ISAHAYA	获取价格	Transistor
2SA1282A-T11-E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1282A-T11-G	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3

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