2SA1283

更新时间： 2024-11-25 04:25:47

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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中文翻译

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数据手册

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2SA1283 数据手册

Transys

Electronics

I M I T E D

TO-92MOD Plastic-Encapsulated Transistors

TO-92MOD

2SA1283

TRANSISTOR (PNP)

1. EMITTER

FEATURE

Power dissipation

2. COLLECTOR

P_CM: 0.9

W (Tamb=25℃)

3. BASE

Collector current

I_CM

-1

Collector-base voltage

V_(BR)CBO: -60

123

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic= -10µA , I_E=0

I_C=-2mA , I_B=0

I_E= -10µA, I_C=0

V_CB= -50 V, I_E=0

V_EB= -4 V, I_C=0

MIN

-60

-6

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-0.2

µA

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-4 V, I_C= -100mA

I_C= -500 mA, I_B=-25 mA

300

-0.3

Collector-emitter saturation voltage

V_CEsat

Transition frequency

Output capacitance

V_CE=-2V, I_C= -10mA

MHz

f _T

V_CE=-10V, I_E=0,f=1 MHz

C_ob

CLASSIFICATION OF h_FE

Rank

Range

55-110

90-180

150-300

中文翻译

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与2SA1283相关器件

型号	品牌	获取价格	描述	数据表
2SA1283-11-C	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1283-11-D	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1283-11-E	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3
2SA1283C	ISAHAYA	获取价格	Transistor
2SA1283C	CJ	获取价格	Transistor
2SA1283D	TRSYS	获取价格	暂无描述
2SA1283E	ISAHAYA	获取价格	Transistor
2SA1283E	TRSYS	获取价格	暂无描述
2SA1283-T11-C	MITSUBISHI	获取价格	暂无描述
2SA1283-T11-D	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3