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2N4903 PDF预览

2N4903

更新时间: 2024-02-03 12:12:25
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 125K
描述
PNP SILICON TRANSISTORS, EPITAXIAL BASE

2N4903 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.75
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:TIN LEAD处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2N4903 数据手册

 浏览型号2N4903的Datasheet PDF文件第1页浏览型号2N4903的Datasheet PDF文件第3页 
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
Junction to Free Air Thermal Resistance  
RthJC  
RthJA  
2
°C/W  
47.3  
°C/W  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Min Typ Mx Unit  
Symbol  
Ratings  
Test Condition(s)  
2N4901  
-40  
-60  
-80  
Collector-Emitter  
Breakdown Voltage)  
IC=200 mAdc, IB=0  
VCE=-2.0 V, IC=-1.0 A  
VCE=-2.0 V, IC=-5.0 A  
-
-
-
-
80  
-
V
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
VCEO(BR)  
20  
7
DC Current Gain (*)  
V
hFE  
VCE=-40 V, IE=0  
VCE=-60 V, IE=0  
VCE=-80 V, IE=0  
VCE=-40 V, VEB=1.5 V  
VCE=-40 V, VEB=1.5 V,  
-
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-0.1  
Collector-Base cut-off  
Current  
mA  
ICBO  
2N4901  
2N4902  
2N4903  
-
-
-
-
-
-
-
-
-
-
-2.0  
-0.1  
-2.0  
-0.1  
-2.0  
TCASE=150°C  
VCE=-60 V, VEB=1.5 V  
VCE=-60 V, VEB=1.5 V,  
TCASE=150°C  
VCE=-80 V, VEB=1.5 V  
VCE=-80 V, VEB=1.5 V,  
TCASE=150°C  
Collector Cutoff Current  
mA  
ICEX  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
2N4901  
2N4902  
2N4903  
Emitter Cutoff Current  
VBE=5.0 V, IC=0  
-
20  
-
-
-
-
-
-
-1.0 mA  
IEBO  
Forward Current Transfer  
Ratio (*)  
VCE=-10 V, IC=-0.5 A  
f =1MHz  
-
V
V
V
Hfe  
IC=-1.0 A, IB=-0.1 A  
IC=-5.0 A, IB=-1.0 A  
IC=-1.0 A, VCE=-2.0 V  
-0.4  
-1.5  
-1.2  
Collector-Emitter saturation  
Voltage (*)  
VCE(SAT)  
-
Base-Emitter Voltage (*)  
-
VBE  
3

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