5秒后页面跳转
2N4416A PDF预览

2N4416A

更新时间: 2024-01-25 17:41:34
品牌 Logo 应用领域
Linear Systems 晶体放大器晶体管
页数 文件大小 规格书
2页 224K
描述
N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER

2N4416A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-72
包装说明:CYLINDRICAL, O-MBCY-W4针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.04
配置:SINGLE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.015 AFET 技术:JUNCTION
最大反馈电容 (Crss):1 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-72JESD-30 代码:O-MBCY-W4
JESD-609代码:e3元件数量:1
端子数量:4工作模式:DEPLETION MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最小功率增益 (Gp):4 dB
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2N4416A 数据手册

 浏览型号2N4416A的Datasheet PDF文件第2页 
2N/SST4416 2N4416A  
N-CHANNEL JFET  
HIGH FREQUENCY AMPLIFIER  
Linear Integrated Systems  
FEATURES  
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A  
VERY LOW NOISE FIGURE (400 MHz)  
EXCEPTIONAL GAIN (400 MHz)  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
4 dB (max)  
10 dB (min)  
2N SERIES  
2N SERIES* SST SERIES  
TO-72  
TO-92  
SOT-23  
BOTTOM VIEW  
BOTTOM VIEW  
TOP VIEW  
1
3
2
D
S
D
S
2
1
3
4
G
C
Storage Temperature  
-65 to +200 °C  
-55 to +135 °C  
S
1
D G  
G
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Maximum Currents  
2 3  
300mW  
10mA  
Gate Current  
Maximum Voltages  
*Optional Package For 2N4416  
Gate to Drain or Gate to Source LS4416  
Gate to Drain or Gate to Source LS4416A  
-30V  
-35V  
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)  
SYMBOL  
CHARACTERISTIC  
MIN TYP MAX UNITS CONDITIONS  
2N/SST4416  
2N4416A  
2N/SST4416  
2N4416A  
-30  
-35  
Gate to Source  
BVGSS  
IG = -1µA, VDS = 0V  
Breakdown Voltage  
V
-6  
-6  
15  
-0.1  
-1.0  
7500  
50  
0.8  
4
Gate to Source  
Cutoff Voltage  
VGS(off)  
IDSS  
VDS = 15V, ID = 1nA  
-2.5  
5
Gate to Source Saturation Current  
mA  
nA  
VDS = 15V, VGS = 0V  
VGS = -20V, VDS = 0V  
VGS = -15V, VDS = 0V  
2N  
SST  
IGSS  
Gate Leakage Current  
gfs  
gos  
Ciss  
Crss  
Coss  
en  
Forward Transconductance  
Output Conductance  
4500  
µS  
pF  
VDS = 15V, VGS = 0V, f = 1kHz  
Input Capacitance2  
Reverse Transfer Capacitance2  
Output Capacitance2  
Equivalent Input Noise Voltage  
VDS = 15V, VGS = 0V, f = 1MHz  
2
6
nV/Hz VDS = 10V, VGS = 0V, f = 1kHz  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

与2N4416A相关器件

型号 品牌 描述 获取价格 数据表
2N4416A_08 MICROSEMI N-CHANNEL J-FET

获取价格

2N4416A_TO-18 MICROSS a N-Channel high frequency JFET amplifier

获取价格

2N4416A_TO-72 MICROSS a N-Channel high frequency JFET amplifier

获取价格

2N4416A_TO-92 MICROSS a N-Channel high frequency JFET amplifier

获取价格

2N4416AC1 SEME-LAB SILICON SMALL SIGNAL N-CHANNEL JFET

获取价格

2N4416ACSM SEME-LAB SMALL SIGNAL N-CHANNEL J-FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HI

获取价格