Datasheet > 2N2369A

2N2369A

更新时间： 2024-04-09 18:59:36

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描述
NPN Switching Transistor

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数据手册

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2N2369A 数据手册

NPN SWITCHING

TRANSISTOR

2N2369A

•

Silicon Planer Epitaxial NPN Transistor

Hermetic TO18 Metal Package

Designed For High Speed Switching Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

40V

CBO

CEO

CES

EBO

15V

40V

4.5V

Continuous Collector Current

Total Power Dissipation at

200mA

T = 25°C

360mW

Derate Above 25°C

2.06mW/°C

360mW

T = 125°C

Total Power Dissipation at

Derate Above 125°C

4.80mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

486

°C/W

θJA

208.3

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Telephone +44 (0) 1455 556565

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 5277

Issue 2

Website: http://www.semelab-tt.com

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