Datasheet > 290702-13

290702-13

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存无线
页数	文件大小	规格书
102页	1400K
描述
Numonyx Wireless Flash Memory (W30)

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290702-13 数据手册

Numonyx™ Wireless Flash Memory (W30)

The flash device Command User Interface (CUI) links the system processor to the

internal flash memory operation. A valid command sequence written to the CUI initiates

the flash device Write State Machine (WSM) operation, which automatically executes

the algorithms, timings, and verifications necessary to manage flash memory program

and erase. An internal status register provides ready/busy indication results of the

operation (success, fail, and so on).

Three power-saving features– Automatic Power Savings (APS), standby, and RST#–

can significantly reduce power consumption.

• The flash device automatically enters APS mode following read cycle completion.

• Standby mode begins when the system deselects the flash memory by de-asserting

CE#.

• Driving RST# low produces power savings similar to standby mode. It also resets

the part to read-array mode (important for system-level reset), clears internal

status registers, and provides an additional level of flash device write protection.

2.2

Memory Map and Partitioning

The W30 flash memory device is divided into 4-Mbit physical partitions. This

partitioning allows simultaneous RWW or RWE operations, and enables users to

segment code and data areas on 4-Mbit boundaries. The flash memory array is

asymmetrically blocked, which enables system code and data integration within a

single flash device. Each block can be erased independently in block erase mode.

Simultaneous program and erase operations are not allowed; only one partition at a

time can be actively programming or erasing. See Table 1, “Bottom Parameter Memory

Map” on page 11 and Table 2, “Top Parameter Memory Map” on page 11.

• The 32-Mbit flash device has eight partitions.

• The 64-Mbit flash device has 16 partitions.

• The 128-Mbit flash device has 32 partitions.

Each flash device density contains one parameter partition and several main partitions.

The 4-Mbit parameter partition contains eight 4-Kword parameter blocks and seven 32-

Kword main blocks. Each 4-Mbit main partition contains eight 32-Kword blocks.

The bulk of the flash memory array is divided into main blocks that can store code or

data, and parameter blocks that allow storage of frequently updated small parameters

that are normally stored in EEPROM. By using software techniques, the word-rewrite

functionality of EEPROMs can be emulated.

Datasheet

November 2007

Order Number: 290702-13

1...7 8 91011 12 13...102

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