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27LV256-20L

更新时间： 2024-01-31 20:32:58

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
12页	68K
描述
256K (32K x 8) Low-Voltage CMOS EPROM

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27LV256-20L 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	8 X 13.40 MM, PLASTIC, VSOP-28	针数：	28
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.71	风险等级：	5.91
最长访问时间：	200 ns	其他特性：	DATA RETENTION >200 YEARS
I/O 类型：	COMMON	JESD-30 代码：	R-PDSO-G28
JESD-609代码：	e0	长度：	11.8 mm
内存密度：	262144 bit	内存集成电路类型：	OTP ROM
内存宽度：	8	功能数量：	1
端子数量：	28	字数：	32768 words
字数代码：	32000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP28,.53,22	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	3.3/5 V
编程电压：	13 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大待机电流：	0.0001 A
子类别：	OTP ROMs	最大压摆率：	0.025 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.55 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	8 mm
Base Number Matches：	1

27LV256-20L 数据手册

27LV256

1.3

Standby Mode

1.6

Verify

The standby mode is deﬁned when the CE pin is high

(VIH) and a program mode is not deﬁned. Output Dis-

able

After the array has been programmed it must be veri-

ﬁed to ensure that all the bits have been correctly pro-

grammed. This mode is entered when all of the

following conditions are met:

1.4

Output Enable

a) VCC is at the proper level

b) VPP is at the proper VH level

c) the CE pin is high

This feature eliminates bus contention in multiple bus

microprocessor systems and the outputs go to a high

impedance when the following condition is true:

d) the OE line is low

•

The OE pin is high and program mode is not

deﬁned.

1.7

Inhibit

When Programming multiple devices in parallel with

different data, only CE needs to be under separate con-

trol to each device. By pulsing the CE line low on a par-

ticular device, that device will be programmed, and all

other devices with CE held high will not be pro-

grammed with the data although address and data are

available on their input pins.

1.5

Programming Mode

The Express algorithm has been developed to improve

on the programming throughput times in a production

environment. Up to 10 100-microsecond pulses are

applied until the byte is veriﬁed. No over-programming

is required. A ﬂowchart of the express algorithm is

shown in Figure 1.

1.8

Identity Mode

Programming takes place when:

In this mode speciﬁc data is outputted which identiﬁes

the manufacturer as Microchip Technology Inc. and

device type. This mode is entered when Pin A9 is

taken to VH (11.5V to 12.5V). The CE and OE lines

must be at VIL. A0 is used to access any of the two

non-erasable bytes whose data appears on O0 through

O7.

a) VCC is brought to the proper voltage

b) VPP is brought to the proper VH level

c) the OE pin is high

d) the CE pin is low

Since the erased state is “1” in the array, programming

of “0” is required. The address to be programmed is set

via pins A0-A14 and the data to be programmed is pre-

sented to pins O0-O7. When data and address are sta-

ble, a low-going pulse on the CE line programs that

location.

Identity

Input

Output

A0 0 O O O O O O O

Manufacturer

Device Type*

VIL

VIH

* Code subject to change.

DS11020F-page 6

1996 Microchip Technology Inc.

1...3 4 567 8 9...12

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