Datasheet > 存储 > EPROM> 27C512A-15I/P

27C512A-15I/P

更新时间： 2024-01-06 17:27:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	133K
描述
512K (64K x 8) CMOS EPROM

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中文翻译

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技术参数
数据手册

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27C512A-15I/P 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	8 X 13.40 MM, PLASTIC, VSOP-28
针数：	28	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	5.16	Is Samacsys：	N
最长访问时间：	150 ns	其他特性：	DATA RETENTION >200 YEARS
I/O 类型：	COMMON	JESD-30 代码：	R-PDSO-G28
JESD-609代码：	e0	长度：	11.8 mm
内存密度：	524288 bit	内存集成电路类型：	OTP ROM
内存宽度：	8	功能数量：	1
端子数量：	28	字数：	65536 words
字数代码：	64000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP1
封装等效代码：	TSSOP28,.53,22	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大待机电流：	0.00003 A	子类别：	OTP ROMs
最大压摆率：	0.035 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.55 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	8 mm	Base Number Matches：	1

27C512A-15I/P 数据手册

27C512A

Since the erased state is “1” in the array, programming

of “0” is required. The address to be programmed is set

via pins A0 - A15 and the data to be programmed is

presented to pins O0 - O7. When data and address are

stable, a low going pulse on the CE line programs that

location.

1.3

Standby Mode

The standby mode is entered when the CE pin is high,

and the program mode is not identified.

When this conditions are met, the supply current will

drop from 25 mA to 30 µA.

1.7

Verify

1.4

Output Enable OE/VPP

After the array has been programmed it must be veri-

fied to ensure all the bits have been correctly pro-

grammed. This mode is entered when all the following

conditions are met:

This multifunction pin eliminates bus connection in mul-

tiple bus microprocessor systems and the outputs go to

high impedance when:

• the OE/VPP pin is high (VIH).

a) VCC is at the proper level,

b) the OE/VPP pin is low, and

c) the CE line is low.

When a VH input is applied to this pin, it supplies the

programming voltage (VPP) to the device.

1.5

Erase Mode (UV Windowed Versions)

1.8

Inhibit

Windowed products offer the ability to erase the mem-

ory array. The memory matrix is erased to the all “1's”

state as a result of being exposed to ultraviolet light. To

ensure complete erasure, a dose of 15 watt-second/

cm²is required. This means that the device window

must be placed within one inch and directly underneath

an ultraviolet lamp with a wavelength of 2537 Ang-

stroms, intensity of 12,000 mW/cm²for approximately

40 minutes.

When programming multiple devices in parallel with dif-

ferent data, only CE needs to be under separate control

to each device. By pulsing the CE line low on a partic-

ular device, that device will be programmed; all other

devices with CE held high will not be programmed with

the data (although address and data will be available

on their input pins).

1.9

Identity Mode

1.6

Programming Mode

In this mode specific data is output which identifies the

manufacturer as Microchip Technology Inc. and the

device type. This mode is entered when Pin A9 is

taken to VH (11.5V to 12.5V). The CE and OE/VPP lines

must be at VIL. A0 is used to access any of the two

non-erasable bytes whose data appears on O0 through

O7.

The Express algorithm must be used for best results. It

has been developed to improve programming yields

and throughput times in a production environment. Up

to 10 100-microsecond pulses are applied until the byte

is verified. A flowchart of the Express algorithm is

shown in Figure 1-3.

Programming takes place when:

a) VCC is brought to the proper voltage,

b) OE/VPP is brought to the proper VH level, and

c) CE line is low.

Identity

Input

Output

0 O O O O O O O

Manufacturer

Device Type*

VIL

VIH

* Code subject to change

DS11173G-page 6

2004 Microchip Technology Inc.

1...3 4 567 8 9 10

中文翻译

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与27C512A-15I/P相关器件

型号	品牌	描述	获取价格	数据表
27C512A-15I/SO	MICROCHIP	512K (64K x 8) CMOS EPROM	获取价格
27C512A-15I/TS	MICROCHIP	64K X 8 OTPROM, 150 ns, PDSO28, 8 X 20 MM, PLASTIC, TSOP-28	获取价格
27C512A-15I/VS	MICROCHIP	64K X 8 OTPROM, 150 ns, PDSO28, 8 X 13.40 MM, PLASTIC, VSOP-28	获取价格
27C512A15IL	ETC	x8 EPROM	获取价格
27C512A-15IL	MICROCHIP	512K (64K x 8) CMOS EPROM	获取价格
27C512A15IP	ETC	x8 EPROM	获取价格

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