Datasheet > 27C256_04

27C256_04

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	92K
描述
256K (32K x 8) CMOS EPROM

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27C256_04 数据手册

27C256

FIGURE 1-2: PROGRAMMING WAVEFORMS

Program

Verify

Address

Data

Address Stable

High Z

Data Stable

Data Out Valid

tDH

(1)

13.0V(2)

5.0V

VPS

VCS

6.5V(2)

5.0V

OES

(1)

Notes:

(1)

(2)

tDF and tOE are characteristics of the device but must be accommodated by the programmer

CC = 6.5 V ±0.25V, V PP = V

= 13.0V ±0.25V for express algorithm

TABLE 1-6:

MODES

Operation Mode

Read

VPP

O0 - O7

VIL

VIH

VIL

VIH

VIL

VIH

VCC

DOUT

DIN

Program

Program Verify

Program Inhibit

Standby

DOUT

High Z

VCC

High Z

Output Disable

Identity

VIH

VIL

High Z

Identity Code

X = Don’t Care

1.2

Read Mode

For Read operations, if the addresses are stable, the

address access time (tACC) is equal to the delay from

CE to output (tCE). Data is transferred to the output

after a delay from the falling edge of OE (tOE).

(See Timing Diagrams and AC Characteristics)

Read Mode is accessed when:

a) the CE pin is low to power up (enable) the chip

b) the OE pin is low to gate the data to the output

pins

2004 Microchip Technology Inc.

DS11001N-page 5

1 2 3 456 7 8...10

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