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27C256_04 PDF预览

27C256_04

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
10页 92K
描述
256K (32K x 8) CMOS EPROM

27C256_04 数据手册

 浏览型号27C256_04的Datasheet PDF文件第1页浏览型号27C256_04的Datasheet PDF文件第3页浏览型号27C256_04的Datasheet PDF文件第4页浏览型号27C256_04的Datasheet PDF文件第5页浏览型号27C256_04的Datasheet PDF文件第6页浏览型号27C256_04的Datasheet PDF文件第7页 
27C256  
TABLE 1-1:  
Name  
PIN FUNCTION TABLE  
Function  
1.0  
ELECTRICAL CHARACTERISTICS  
1.1  
Maximum Ratings*  
VCC and input voltages w.r.t. VSS........-0.6V to +7.25V  
A0-A14  
CE  
Address Inputs  
Chip Enable  
VPP voltage w.r.t. VSS during  
programming .......................................-0.6V to +14.0V  
OE  
Output Enable  
Programming Voltage  
Data Output  
Voltage on A9 w.r.t. VSS ......................-0.6V to +13.5V  
Output voltage w.r.t. VSS ................-0.6V to VCC +1.0V  
Storage temperature ..........................-65°C to +150°C  
Ambient temp. with power applied .....-65°C to +125°C  
VPP  
O0 - O7  
VCC  
+5V Power Supply  
Ground  
*Notice: Stresses above those listed under “Maximum Ratings”  
may cause permanent damage to the device. This is a stress rat-  
ing only and functional operation of the device at those or any  
other conditions above those indicated in the operation listings of  
this specification is not implied. Exposure to maximum rating con-  
ditions for extended periods may affect device reliability.  
VSS  
NC  
No Connection; No Internal Connec-  
tion  
NU  
Not Used; No External Connection Is  
Allowed  
TABLE 1-2:  
READ OPERATION DC CHARACTERISTICS  
VCC = +5V (±10%)  
Commercial:  
Industrial:  
Tamb = 0°C to +70°C  
Tamb = -40°C to +85°C  
Tamb = -40°C to +125°C  
Extended (Automotive):  
Parameter  
Part*  
Status  
Symbol  
Min.  
Max. Units  
Conditions  
Input Voltages  
all  
Logic "1"  
Logic "0"  
VIH  
VIL  
2.0  
-0.5  
VCC+1  
0.8  
V
V
Input Leakage  
all  
all  
ILI  
-10  
2.4  
10  
µA VIN = 0 to VCC  
Output Voltages  
Logic "1"  
Logic "0"  
VOH  
VOL  
V
V
IOH = -400 µA  
IOL = 2.1 mA  
0.45  
10  
6
Output Leakage  
all  
all  
ILO  
-10  
µA VOUT = 0V to VCC  
Input Capacitance  
CIN  
pF VIN = 0V; Tamb = 25°C;  
f = 1 MHz  
Output Capacitance  
all  
COUT  
12  
pF VOUT = 0V; Tamb = 25°C;  
f = 1 MHz  
Power Supply Current,  
Active  
C
I,E  
TTL input  
TTL input  
ICC1  
ICC2  
20  
25  
mA VCC = 5.5V; VPP = VCC  
mA f = 1 MHz;  
OE = CE = VIL;  
IOUT = 0 mA;  
VIL = -0.1 to 0.8V;  
VIH = 2.0 to VCC;  
Note 1  
Power Supply Current,  
Standby  
C
I, E  
all  
TTL input  
TTL input  
CMOS input  
ICC(S)  
2
3
100  
mA  
mA  
µA CE = VCC ± 0.2V  
IPP Read Current  
VPP Read Voltage  
all  
all  
Read Mode  
Read Mode  
IPP  
VPP  
100  
VCC-0.7 VCC  
µA VPP = 5.5V  
V
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges  
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.  
DS11001N-page 2  
2004 Microchip Technology Inc.  

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