Datasheet > 27C256_04

27C256_04

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	92K
描述
256K (32K x 8) CMOS EPROM

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

27C256_04 数据手册

27C256

TABLE 1-3:

READ OPERATION AC CHARACTERISTICS

AC Testing Waveform:

Output Load:

VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V

1 TTL Load + 100 pF

Input Rise and Fall Times: 10 ns

Ambient Temperature: Commercial:

Tamb = 0°C to +70°C

Industrial:

Tamb = -40°C to +85°C

Automotive:

Tamb = -40°C to +125°C

27C256-90* 27C256-10* 27C256-12 27C256-15 27C256-20

Min Max Min Max Min Max Min Max Min Max

Parameter

Sym

Units Conditions

Address to Output

Delay

tACC

—

100

—

120

—

150

—

200

ns CE=OE =VIL

CE to Output Delay

OE to Output Delay

tCE

—

100

—

120

—

150

—

200

ns OE = VIL

ns CE = VIL

tOE

tOFF

CE or OE to O/P

High Impedance

Output Hold from

tOH

—

Address CE or OE,

whichever goes first

* -10, -90 AC Testing Waveform: VIH = 2.4V and VIL = .45V; VOH = 1.5V and VOL = 1.5V

Output Load: 1 TTL Load + 30pF

FIGURE 1-1: READ WAVEFORMS

VIH

Address Valid

Address

VIL

VIH

VIL

tCE(2)

VIH

VIL

tOFF(1,3)

tOE(2)

tOH

VOH

VOL

Outputs

O0 - O7

High Z

Valid Output

tACC

Notes: (1) tOFF is specified for OE or CE, whichever occurs first

(2) OE may be delayed up to t CE - tOE after the falling edge of CE without impact on t

(3) This parameter is sampled and is not 100% tested.

2004 Microchip Technology Inc.

DS11001N-page 3

1 234 5 6 7...10

下载PDF

与27C256_04相关器件

型号	品牌	描述	获取价格	数据表
27C256-10	MICROCHIP	256K (32K x 8) CMOS EPROM	获取价格
27C256-10	Macronix	256K-BIT [32K x 8] CMOS EPROM	获取价格
27C25610/12/15/20/90	ETC	27C25610/12/15/20/90 Datasheet	获取价格
27C256-10/12/15/20/90	ETC	EPROM	获取价格
27C256-10/J	ETC	x8 EPROM	获取价格
27C256-10/K	MICROCHIP	32K X 8 UVPROM, 100 ns, CQCC32, CERAMIC, LCC-32	获取价格