Datasheet > 27C128_04

27C128_04

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
10页	147K
描述
128K (16K x 8) CMOS EPROM

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27C128_04 数据手册

27C128

FIGURE 1-2: PROGRAMMING WAVEFORMS (1)

TABLE 1-6:

MODES

Operation Mode

Read

PGM

VPP

O0 - O7

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VCC

DOUT

DIN

Program

Program Verify

Program Inhibit

Standby

DOUT

High Z

VCC

High Z

Output Disable

Identity

VIH

VIL

VIH

High Z

Identity Code

X = Don’t Care

For Read operations, if the addresses are stable, the

address access time (tACC) is equal to the delay from

CE to output (tCE). Data is transferred to the output

after a delay from the falling edge of OE (tOE).

1.2

Read Mode

(See Timing Diagrams and AC Characteristics)

Read Mode is accessed when

a) the CE pin is low to power up (enable) the chip

b) the OE pin is low to gate the data to the output

pins

2004 Microchip Technology Inc.

DS11003L-page 5

1 2 3 456 7 8...10

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