Datasheet > 25PT08A

25PT08A

更新时间： 2022-09-15 18:58:18

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
5页	952K
描述
Stansard SCRs, 25A

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25PT08A 数据手册

RoHS

25PT Series _RoHS

SEMICONDUCTOR

Fig.6 Relative variation of gate trigger

holding, and latching currents

versus junction temperature.

Fig.5 Relative variation of thermal

impedance versus pulse duration.

(TO-220AB ins)

K=[Z_th/R_th]

l_GT,l_H,l_L[T_j] / l_GT,l_H,l_L[T_j=25°C]

2.5

2.0

1.5

1.0E+01

th(j-c)

1.0E-01

& I

1.0

0.5

0.0

th(j-a)

t_P(s)

T_j(°C)

1.0E-02

1.0E+03

-40

-20

100

120

140

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02

Fig.7 Surge peak on-state current versus

number of cycles.

Fig.8 Non-repetitive surge peak on-state

current , and corresponding values

of l²t

I_TSM(A), l²t (A²s)

I_TSM(A)

2000

1000

350

300

250

200

150

100

T_jinitial = 25°C

T_p=10ms

One cycle

l_TSM

Non repetitive

T initial = 25°C

l²t

dl/dt

limitattion

Repetitive

Sinusoidal pulse width t (ms)

= 83 °C

case

Number of cycles

100

0.01

0.10

1.00

10.00

100

1000

Fig.9 On-state characteristics (maximum

values)

Fig.10 Thermal resistance junction to

ambient versus copper surface

under tab (D²PAK)

I_TM(A)

_th(j-a)(°C/W)

1000

100

Epoxy printed circuit board FR4,

copper thickness = 35 µm

T_jmax.:

V_to= 0.77V

R_d= 14m

S(cm²)

V_TM(V)

0.0 0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

12 16

20 24 28 32

36 40

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