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25PT12AF-D PDF预览

25PT12AF-D

更新时间: 2024-11-12 00:57:27
品牌 Logo 应用领域
尼尔 - NELLSEMI /
页数 文件大小 规格书
6页 856K
描述
Stansard SCRs

25PT12AF-D 数据手册

 浏览型号25PT12AF-D的Datasheet PDF文件第2页浏览型号25PT12AF-D的Datasheet PDF文件第3页浏览型号25PT12AF-D的Datasheet PDF文件第4页浏览型号25PT12AF-D的Datasheet PDF文件第5页浏览型号25PT12AF-D的Datasheet PDF文件第6页 
25PT Series RoHS  
Stansard SCRs, 25A  
Main Features  
A
Symbol  
Value  
25  
600 to 1200  
4 to 40  
Unit  
I
A
T(RMS)  
K
A
G
K
A
G
V
/V  
DRM RRM  
V
TO-220AB (Non-lnsulated)  
(25PTxxA)  
TO-220AB (lnsulated)  
I
mA  
GT  
(25PTxxAI)  
A
DESCRIPTION  
The 25PT series of silicon controlled rectifiers are high  
performance glass passivated technology, and are  
suitable for general purpose applications.  
K
A
G
2
TO-263 (D PAK)  
TO-220F (ITO-220AB)  
(25PTxxAF)  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(25PTxxH)  
2(A)  
3(G)  
1(K)  
ABSOLUTE MAXIMUM RATINGS  
TEST CONDITIONS  
TO-263/TO-220AB  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
Tc=100°C  
Tc=85°C  
Tc=100°C  
Tc=85°C  
t = 20 ms  
t = 16.7 ms  
RMS on-state current full sine wave  
IT(RMS)  
A
A
A
25  
(180° conduction angle )  
TO-220AB insulated/TO-220F  
TO-263/TO-220AB  
TO-220AB insulated/TO-220F  
F =50 Hz  
Average on-state current  
(180° conduction angle)  
IT(AV)  
16  
300  
314  
Non repetitive surge peak on-state  
ITSM  
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
2
I t Value for fusing  
2
A s  
2
I t  
tp = 10 ms  
450  
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
F = 60 Hz  
A/µs  
dI/dt  
Tj = 125ºC  
150  
Tp = 20 µs  
IGM  
Tj = 125ºC  
Tj = 125ºC  
Peak gate current  
4
10  
1
A
Tp =20µs  
Maximum gate power  
PGM  
W
W
PG(AV)  
Average gate power dissipation  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Storage temperature range  
Tj =125ºC  
V
DRM  
600 to 1200  
V
Tj =125ºC  
V
RRM  
T
stg  
- 40 to + 150  
- 40 to + 125  
ºC  
Tj  
Operating junction temperature range  
Page 1 of 6  
www.nellsemi.com  

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