Datasheet > 25PT12A

25PT12A

更新时间： 2024-11-11 11:46:15

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
5页	952K
描述
Stansard SCRs, 25A

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数据手册

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25PT12A 数据手册

RoHS

25PT Series _RoHS

SEMICONDUCTOR

Stansard SCRs, 25A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1600

4 to 40

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

(25PTxxA)

(25PTxxAI)

DESCRIPTION

(A2)

The 25PT series of silicon controlled rectifiers are high

performance glass passivated technology, and are

suitable for general purpose applications.

TO-263 (D²PAK)

(G)3

1(A1)

Using clip assembly technology, they provide a

superior performance in surge current capabilities.

(25PTxxH)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

VALUE

UNIT

PARAMETER

SYMBOL

Tc=100°C

TO-263/TO-220AB

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

TO-220AB insulated

TO-263/TO-220AB

TO-220AB insulated

F =50 Hz

Tc=83°C

Tc=100°C

Tc=83°C

t = 20 ms

t = 16.7 ms

Average on-state current

(180° conduction angle)

I_T(AV)

300

314

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

450

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

F = 60 Hz

dI/dt

I_GM

T_j= 125ºC

T_p= 20 µs

T_j= 125ºC

Peak gate current

T_p=20µs

Maximum gate power

P_GM

P_G(AV)

Average gate power dissipation

Repetitive peak off-state voltage

T_j=125ºC

V_DRM

V_RRM

T_stg

600 to 1600

Repetitive peak reverse voltage

Storage temperature range

- 40 to + 150

- 40 to + 125

ºC

T_j

Operating junction temperature range

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