Datasheet > 25PT10AI-D

25PT10AI-D

更新时间： 2024-11-12 00:57:27

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
6页	856K
描述
Stansard SCRs

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数据手册

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25PT10AI-D 数据手册

RoHS

25PT Series _RoHS

Stansard SCRs, 25A

Main Features

Symbol

Value

600 to 1200

4 to 40

Unit

T(RMS)

DRM RRM

TO-220AB (Non-lnsulated)

(25PTxxA)

TO-220AB (lnsulated)

(25PTxxAI)

DESCRIPTION

The 25PT series of silicon controlled rectifiers are high

performance glass passivated technology, and are

suitable for general purpose applications.

TO-263 (D PAK)

TO-220F (ITO-220AB)

(25PTxxAF)

Using clip assembly technology, they provide a

superior performance in surge current capabilities.

(25PTxxH)

2(A)

3(G)

1(K)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

TO-263/TO-220AB

VALUE

UNIT

PARAMETER

SYMBOL

Tc=100°C

Tc=85°C

Tc=100°C

Tc=85°C

t = 20 ms

t = 16.7 ms

RMS on-state current full sine wave

I_T(RMS)

(180° conduction angle )

TO-220AB insulated/TO-220F

TO-263/TO-220AB

TO-220AB insulated/TO-220F

F =50 Hz

Average on-state current

(180° conduction angle)

I_T(AV)

300

314

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

F =60 Hz

I t Value for fusing

A s

I t

t_p= 10 ms

450

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

F = 60 Hz

A/µs

dI/dt

T_j= 125ºC

150

T_p= 20 µs

I_GM

T_j= 125ºC

Peak gate current

T_p=20µs

Maximum gate power

P_GM

P_G(AV)

Average gate power dissipation

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Storage temperature range

T_j=125ºC

DRM

600 to 1200

T_j=125ºC

RRM

stg

- 40 to + 150

- 40 to + 125

ºC

T_j

Operating junction temperature range

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