Datasheet > 25N06L-TN3-R

25N06L-TN3-R

更新时间： 2022-09-15 18:56:12

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	182K
描述
25A, 60V N-CHANNEL POWER MOSFET

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25N06L-TN3-R 数据手册

25N06

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSSI_D=250µA, V_GS=0V

V_DS=Max Rating

I_DSS

Drain-Source Leakage Current (V_GS=0)

µA

V_DS= Max Rating×0.8, T_C=125°C

Gate- Source Leakage Current (V_DS=0)

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

On State Drain Current

Forward Transconductance (Note 1)

DYNAMIC PARAMETERS

Input Capacitance

I_GSS

V_GS=±20V

±100 nA

V_GS(TH)V_DS=V_GS, I_D=250µA

R_DS(ON)V_GS=10V, I_D=12.5A

2.9

ꢀ

0.048 0.065

I_D(on)

g_FS

V_DS>I_D(on)×R_DS(ON)MAX, V_GS=10V

V_DS>I_D(on)×R_DS(ON)MAX, I_D=12.5A

C_ISS

C_OSS

C_RSS

700 900 pF

320 450 pF

90 150 pF

Output Capacitance

_GS=0V, V_DS=25V, f=1MHz

_DD=40V, V_GS=10V, I_D=25A

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

V_DD=30V, I_D=3A, R_G=50ꢀ,

_GS=10V

V_DD=40V, I_D=25A, R_G=50ꢀ,

_GS=10V

Rise Time

90 130 ns

80 120 ns

Turn-OFF Delay Time

t_D(OFF)

t_F

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Source-Drain Current

V_SD

I_SD

I_SD=25A, V_GS=0V (Note 1)

1.5

Source-Drain Current (Pulsed) (Note 2)

I_SDM

100

Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%.

2. Pulse width limited by safe operating area

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-450.b

www.unisonic.com.tw

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