Datasheet > 25N06L-TN3-R

25N06L-TN3-R

更新时间： 2022-09-15 18:56:12

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
6页	182K
描述
25A, 60V N-CHANNEL POWER MOSFET

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25N06L-TN3-R 数据手册

25N06

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DS

RATINGS

UNIT

Drain-Source Voltage (V_GS=0)

Drain-Gate Voltage (R_GS=20kΩ)

Gate-Source Voltage

V_DGR

V_GS

± 20

T_C=25°C

Drain Current (Continuous)

I_D

T_C=100°C

Drain Current (Pulsed) (Note 2)

Single Pulse Avalanche Energy

(starting T_J=25°C, I_D=25A, V_DD=25 V)

TO-220

Power Dissipation at T_C=25°C

TO-252

I_DM

E_AS

100

P_D

Junction Temperature

Storage Temperature

T_J

150

°C

T_STG

-65 ~ +150

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

100

UNIT

°C/W

TO-220

TO-252

TO-220

TO-252

Junction to Ambient

Junction to Case

θ_JA

1.57

θ_JC

°C/W

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-450.b

www.unisonic.com.tw

123 4 5 6

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