23X256
1.0
ELECTRICAL CHARACTERISTICS
(†)
Absolute Maximum Ratings
VCC.............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
ESD protection on all pins...........................................................................................................................................2kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
Automotive (E): TA = -40°C to +125°C
TA = -40°C to +85°C
DC CHARACTERISTICS
Param.
No.
Sym.
Characteristic
Min.
Typ(1)
Max. Units
Test Conditions
D001
D001
D002
VCC
Supply voltage
Supply voltage
1.5
2.7
—
—
—
1.95
3.6
V
V
V
23A256 (I-Temp)
VCC
VIH
23K256 (I,E-Temp)
High-level input
voltage
.7 VCC
VCC
+0.3
D003
D004
D005
D006
D007
D008
VIL
Low-level input
voltage
-0.3
—
—
—
—
—
—
0.2xVCC
V
V
VOL
Low-level output
voltage
0.2
IOL = 1 mA
VOH
ILI
High-level output
voltage
VCC -0.5
—
—
V
IOH = -400 A
Input leakage
current
±0.5
±0.5
A
A
CS = VCC, VIN = VSS OR VCC
CS = VCC, VOUT = VSS OR VCC
ILO
Output leakage
current
—
ICC Read
—
—
—
—
—
—
3
6
10
mA FCLK = 1 MHz; SO = O
mA FCLK = 10 MHz; SO = O
mA FCLK = 20 MHz; SO = O
Operating current
Standby current
D009
ICCS
—
—
—
0.2
1
A CS = VCC = 1.8V, Inputs tied to VCC
or VSS
A CS = VCC = 3.6V, Inputs tied to VCC
or VSS
A CS = VCC = 3.6V, Inputs tied to VCC
or VSS @ 125°C
1
4
5
10
D010
D011
CINT
VDR
Input capacitance
7
pF VCC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
RAM data retention
voltage (2)
—
1.2
—
V
Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.
DS22100E-page 2
2010 Microchip Technology Inc.