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2376 PDF预览

2376

更新时间: 2024-02-08 17:53:09
品牌 Logo 应用领域
德州仪器 - TI 控制器
页数 文件大小 规格书
23页 671K
描述
IEEE 802.3af PoE POWERED DEVICE CONTROLLERS WITH AUTO-RETRY

2376 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8504.32.00.00
风险等级:5.63次级绕组数量:1
输出电流 1:21.74 A变压器类型:TOROIDAL POWER TRANSFORMER
VA 额定值:5000 VABase Number Matches:1

2376 数据手册

 浏览型号2376的Datasheet PDF文件第1页浏览型号2376的Datasheet PDF文件第2页浏览型号2376的Datasheet PDF文件第4页浏览型号2376的Datasheet PDF文件第5页浏览型号2376的Datasheet PDF文件第6页浏览型号2376的Datasheet PDF文件第7页 
TPS2375-1  
TPS2377-1  
www.ti.com  
SLVS570MARCH 2005  
RECOMMENDED OPERATING CONDITIONS  
MIN  
0
MAX  
57  
UNIT  
V
VDD, PG, RTN  
Input voltage range  
UVLO  
0
5
V
Operating current range (sinking)  
Classification resistor(1)  
RTN  
0
350  
4420  
500  
2
mA  
CLASS  
255  
62.5  
0
(1)  
R(ILIM) Inrush limit program resistor  
kΩ  
mA  
°C  
°C  
Sinking current  
PG  
TJ  
Operating junction temperature  
Operating free–air temperature  
-40  
-40  
125  
85  
TA  
(1) Voltage should not be externally applied to CLASS and ILIM.  
ELECTRICAL CHARACTERISTICS  
V(VDD) = 48 V, R(DET) = 24.9 k, R(CLASS) = 255 , R(ILIM) = 178 k, and –40°C TJ 125°C, unless otherwise noted. Positive  
currents are into pins. Typical values are at 25°C. All voltages are with respect to VSS unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
DETECTION  
DET open, V(VDD) = V(RTN) = 1.9 V, measure  
I(VDD) + I(RTN)  
Offset current  
0.3  
4
3
µA  
µA  
DET open, V(VDD) = V(RTN) = 10.1 V, measure  
I(VDD) + I(RTN)  
Sleep current  
12  
DET leakage current  
V(DET) = V(VDD) = 57 V, measure I(DET)  
0.1  
56  
5
µA  
µA  
V(RTN) = V(VDD)  
,
V(VDD) = 1.4 V  
53.7  
395  
58.3  
R(DET) = 24.9 k,  
measure I(VDD) + I(RTN)  
I(DET)  
Detection current  
+
V(VDD) = 10.1 V  
410  
417  
µA  
CLASSIFICATION  
R(CLASS) = 4420 , 13 V(VDD) 21 V  
R(CLASS) = 953 , 13 V(VDD) 21 V  
R(CLASS) = 549 , 13 V(VDD) 21 V  
R(CLASS) = 357 , 13 V(VDD) 21 V  
R(CLASS) = 255 , 13 V(VDD) 21 V  
Regulator turns on, V(VDD) rising  
Regulator turns off, V(VDD) rising  
Hysteresis  
2.2  
10.3  
17.7  
27.1  
38  
2.4  
10.6  
18.3  
28  
2.8  
11.3  
19.5  
29.5  
41.2  
13.0  
23  
I(CLASS)  
Classification current(1)  
mA  
39.4  
11.3  
21.9  
0.78  
V(CL_ON)  
V(CU_OFF)  
V(CU_H)  
Classification lower threshold  
Classification upper threshold  
Leakage current  
10.2  
21  
V
V
0.5  
1
V
V(CLASS) = 0 V, V(VDD) = 57 V  
1
µA  
PASS DEVICE  
rDS(on)  
On resistance  
Leakage current  
Current limit  
Inrush limit  
I(RTN) = 300 mA  
0.58  
1.0  
15  
V(VDD) = V(RTN) = 30 V  
V(RTN) = 1 V  
µA  
mA  
mA  
405  
100  
461  
130  
515  
I(LIM)  
V(RTN) = 2 V, R(ILIM) = 178 kΩ  
180  
V(RTN) falling, R(ILIM) = 178 k, inrush  
statenormal operation  
85%  
91%  
100%  
(2)  
Inrush current termination  
R(ILIM) = 69.8 k, V(RTN-VSS) = 5 V,  
I(RTN) = 30 mA300 mA, V(VDD) increasing  
past upper UVLO  
15  
25  
2
Current rise time into inrush  
µs  
Apply load ∞Ω→20 , time measured to  
I(RTN) = 45 mA  
2.5  
1
Current limit response time  
Leakage current, ILIM  
µs  
V(VDD) = 15 V, V(UVLO) = 0 V  
µA  
(1) Classification is tested with exact resistor values. A 1% tolerance classification resistor ensures compliance with IEEE 802.3af limits.  
(2) This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below which it must fall to make PG  
assert (open-drain).  
3

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