Datasheet > 222212018221

222212018221

更新时间： 2024-01-26 05:23:08

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	813K
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RF Power Field Effect Transistor

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222212018221 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.71	电容：	220 µF
电容器类型：	ALUMINUM ELECTROLYTIC CAPACITOR	介电材料：	ALUMINUM (WET)
ESR：	249 m Ω	JESD-609代码：	e3
漏电流：	0.206 mA	安装特点：	THROUGH HOLE MOUNT
负容差：	20%	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装形状：	TUBULAR PACKAGE	包装方法：	BULK
极性：	POLARIZED	正容差：	20%
额定（直流）电压（URdc）：	63 V	纹波电流：	2150 mA
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形状：	WIRE	Base Number Matches：	1

222212018221 数据手册

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MRF8S9102NR3

RF Device Data

Freescale Semiconductor

Document Number: MRF8S9102N

1^R6^{ev. 0, 2/2011}

1...13 14 1516

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