Datasheet > 20T10BI-BW

20T10BI-BW

更新时间： 2022-09-15 00:27:10

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅三端双向交流开关
页数	文件大小	规格书
5页	1171K
描述
TRIACs, 20A Sunbberless

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数据手册

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20T10BI-BW 数据手册

RoHS

20T Series _RoHS

SEMICONDUCTOR

ELECTRICAL CHARACTERISTICS (T_J= 25 ºC unless otherwise specified)

SNUBBERLESS (3 quadrants)

20Txxxx

QUADRANT

SYMBOL

TEST CONDITIONS

Unit

(1)

I_GT

I - II - III

MAX.

V_D= 12 V, R_L= 33Ω

V_GT

1.5

0.2

V_D= V_DRM, R_L= 3.3KΩ

T_j= 125°C

V_GD

MIN.

MAX.

I - II - III

(2)

I_T= 500 mA

I_H

I - III

I_G= 1.2 I_GT

I_L

dV/dt⁽²⁾

MIN.

250

500

V_D= 67% V_DRMgate open ,T_j= 125°C

V/µs

(dI/dt)c⁽²⁾

(dV/dt)c = 20 A/ms, T_j= 125°C

A/ms

STATIC CHARACTERISTICS

SYMBOL

TEST CONDITIONS

UNIT

VALUE

(2)

I_TM= 28 A, t_P= 380 µs

Threshold voltage

T_j= 25°C

V_TM

1.55

1.04

MAX.

(2)

T_j= 125°C

V_t0

MAX.

(2)

Dynamic resistance

R_d

T_j= 125°C

T_j= 25°C

mΩ

µA

I_DRM

I_RRM

V_D= V_DRM

V_R= V_RRM

MAX.

T_j= 125°C

2.5

Note 1: Minimum l_GTis guaranted at 5% of l_GTmax.

Note 2: For both polarities of A2 referenced to A1.

THERMAL RESISTANCE

UNIT

SYMBOL

VALUE

TO-220AB, TO-263, TO-3P

TO-220AB Insulated, TO-3P Insulated

TO-263

1.3

2.1

R_th(j-c)

Junction to case (AC)

S = 1 cm²

°C/W

R_th(j-a)

TO-220AB Insulated, TO-220AB

Junction to ambient

TO-3P, TO-3P Insulated

S = Copper surface under tab.

PRODUCT SELECTOR

VOLTAGE (xx)

PART NUMBER

SENSITIVITY

TYPE

PACKAGE

1000 V

600 V

800 V

35 mA

50 mA

35 mA

50 mA

35 mA

50 mA

Snubberless

TO-220AB

TO-3P

20TxxA-CW/20TxxAl-CW

20TxxA-BW/20TxxAl-BW

20TxxB-CW/20TxxBl-CW

20TxxB-BW/20TxxBl-BW

20TxxH-CW

TO-3P

D²PAK

20TxxH-BW

AI: Insulated TO-220AB package

BI: Insulated TO-3P package

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