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20TQ035-N3 PDF预览

20TQ035-N3

更新时间: 2024-11-18 07:32:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 167K
描述
Schottky Rectifier, 20 A

20TQ035-N3 数据手册

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VS-20TQ0..PbF Series, VS-20TQ0..-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 20 A  
FEATURES  
Base  
cathode  
2
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Designed and qualified according to JEDEC-JESD47  
Package  
TO-220AC  
20 A  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.51 V  
DESCRIPTION  
VF at IF  
The VS-20TQ... Schottky rectifier series has been optimized  
for very low forward voltage drop, with moderate leakage.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
I
RM max.  
TJ  
105 mA at 125 °C  
150 °C  
Diode variation  
EAS  
Single die  
27 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
Range  
A
V
35 to 45  
1800  
tp = 5 μs sine  
20 Apk, TJ = 125 °C  
Range  
A
VF  
0.51  
V
TJ  
- 55 to 150  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
20TQ035PbF 20TQ035-N3 20TQ040PbF 20TQ040-N3 20TQ045PbF 20TQ045-N3  
Maximum DC  
reverse voltage  
VR  
35  
35  
40  
40  
45  
45  
V
Maximum working  
peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 116 °C, rectangular waveform  
20  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
1800  
Following any rated load  
condition and with rated  
VRRM applied  
IFSM  
10 ms sine or 6 ms rect. pulse  
400  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 4 A, L = 3.4 mH  
27  
4
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Revision: 26-Aug-11  
Document Number: 94167  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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