Zibo Seno Electronic Engineering Co., Ltd.
20SQ030-20SQ100
20A SCHOTTKY BARRIER DIODE
FEATURES
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
A
A
B
High Surge Current Capability
C
D
Mechanical Data
R-6/P-600
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Case: R-6/P-600, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
Dim
A
Min
Max
—
25.4
8.60
1.20
8.60
B
9.10
1.30
9.10
C
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D
All Dimensions in mm
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL 20SQ030 20SQ035 20SQ040 20SQ045 20SQ050 20SQ060 20SQ080 20SQ100
UNIT
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
30
21
30
35
24.5
35
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
100
70
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward
Rectified Current@Tc=95 ℃
20
I(AV)
IFSM
A
A
Peak Forward Surage Current 8.3ms single half
sine-wave super imposed on rated load(JEDEC
Method)
275
0.55
0.70
0.95
Peak Forward Voltage at 20A DC(Note1)
Maximum DC Reverse Current @Tj=25℃
at Rated DC Bolcking Voltage @Tj=100℃
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
VF
IR
V
0.5
50
mA
450
3.0
CJ
R J
TJ
PF
℃/w
℃
-55 to+200
-55 to+200
Storage Temperature Range
TSTG
℃
NOTES:1.300us Pulse Width, 2%Dudy Cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal Resistance Junction to Case.
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20SQ030 - 20SQ100
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