Datasheet > 1SS396(TE85L)

1SS396(TE85L)

更新时间： 2024-01-01 04:04:33

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	177K
描述
RECTIFIER DIODES,DOUBLER,SCHOTTKY,45V V(RRM),SC-59

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技术参数
数据手册

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1SS396(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.72
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.6 V
最大非重复峰值正向电流：	1 A	最高工作温度：	100 °C
最大输出电流：	0.1 A	最大重复峰值反向电压：	45 V
子类别：	Rectifier Diodes	表面贴装：	YES
技术：	SCHOTTKY	Base Number Matches：	1

1SS396(TE85L) 数据手册

1SS396

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS396

Low Voltage High Speed Switching

Unit: mm

z Low forward voltage

z Low reverse current

z Small package

: V

= 0.54V (typ.)

F (3)

: I = 5μA (max.)

: SC-59

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 *

100 *

1 *

FSM

Power dissipation

150 *

125

°C

Junction temperature

Storage temperature range

Operating temperature range

−55∼125

−40∼100

stg

opr

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

1-3G1G

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.012g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Unit rating. Total rating = unit rating × 0.7

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.28

0.36

0.54

―

F (1)

F (2)

F (3)

Forward voltage

―

= 10mA

= 100mA

= 40V

―

0.60

Reverse current

―

μA

Total capacitance

―

= 0, f = 1MH

―

Marking

2007-11-01

12 3

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