Datasheet > 1SS399(TE85L)

1SS399(TE85L)

更新时间： 2024-09-22 07:49:11

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东芝 - TOSHIBA		/
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1SS399(TE85L)

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中文翻译

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数据手册

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1SS399(TE85L) 数据手册

1SS399

TOSHIBA Diode Silicon Epitaxial Planar Diode

1SS399

High Voltage, High Speed Switching Applications

Unit: mm

z Low forward voltage

z High voltage

: V = 1.0 V (typ.)

: V = 400 V (min)

z Fast reverse recovery time: t = 0.5 μs (typ.)

z Small total capacitance

z Small package

: C = 2.5 pF (typ.)

: SC-61

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

420

400

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 *

100 *

2 *

FSM

Power dissipation

150 *

125

°C

JEDEC

―

Junction temperature

JEITA

SC-61

Storage temperature range

−55∼125

TOSHIBA

1-3J1A

stg

Weight: 13 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10 mA

Min

Typ.

Max

Unit

―

0.8

1.0

―

1.3

0.05

0.1

5.0

―

F (1)

F (2)

R (1)

R (2)

Forward voltage

―

= 100 mA

= 300 V

Reverse current

μA

= 400 V

―

Total capacitance

= 0, f = 1 MH

2.5

0.5

Reverse recovery time

= 10 mA

(Fig.1)

μs

2009-07-20

12 3 4

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