Datasheet > 1SS399_07

1SS399_07

更新时间： 2024-11-08 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	255K
描述
High Voltage, High Speed Switching Applications

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1SS399_07 数据手册

1SS399

TOSHIBA Diode Silicon Epitaxial Planar Diode

1SS399

High Voltage, High Speed Switching Applications

Unit: mm

z Low forward voltage

z High voltage

: V = 1.0V (typ.)

: V = 400V (min.)

z Fast reverse recovery time: t = 0.5μs (typ.)

z Small total capacitance

z Small package

: C = 2.5pF (typ.)

: SC-61

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

420

400

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 *

100 *

2 *

FSM

Power dissipation

150 *

125

°C

JEDEC

―

Junction temperature

EIAJ

SC-61

Storage temperature range

−55∼125

TOSHIBA

Weight: 0.013g

2-3J1A

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.8

1.0

―

1.3

0.1

1.0

5.0

―

F (1)

F (2)

R (1)

R (2)

Forward voltage

―

= 100mA

= 300V

Reverse current

μA

= 400V

―

Total capacitance

= 0, f = 1MH

2.5

0.5

Reverse recovery time

= 10mA

(Fig.1)

μs

2007-11-01

12 3 4

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