Datasheet > 1SS272(TE85R,F)

1SS272(TE85R,F)

更新时间： 2024-02-12 18:41:34

品牌	Logo	应用领域
东芝 - TOSHIBA		测试光电二极管
页数	文件大小	规格书
4页	222K
描述
Rectifier Diode

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技术参数
数据手册

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1SS272(TE85R,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SC-61, 4 PIN	Reach Compliance Code：	unknown
风险等级：	5.7	配置：	SEPARATE, 2 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-30 代码：	R-PDSO-G4
最大非重复峰值正向电流：	2 A	元件数量：	2
相数：	1	端子数量：	4
最高工作温度：	125 °C	最大输出电流：	0.1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	最大功率耗散：	0.225 W
最大重复峰值反向电压：	85 V	最大反向电流：	0.5 µA
最大反向恢复时间：	0.004 µs	反向测试电压：	80 V
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

1SS272(TE85R,F) 数据手册

1SS272

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS272

Unit: mm

Ultra High Speed Switching Application

z Low forward voltage

: V

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 0.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

1. CATHODE 1

2. CATHODE 2

3. ANODE 2

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 *

100 *

2 *

4. ANODE 1

FSM

Power dissipation

150 *

125

°C

JEDEC

―

Junction temperature

JEITA

SC−61

Storage temperature range

−55 to 125

stg

TOSHIBA

2−3J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 13 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Unit rating. Total rating = Unit rating × 1.5.

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.2

0.1

0.5

2.0

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MH

0.9

1.6

Reverse recovery time

= 10mA, Fig.1

Start of commercial production

1984-10

2014-03-01

12 3 4

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