1SS272TE85R

更新时间： 2024-01-02 14:10:27

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	207K
描述
TOSHIBA Diode Silicon Epitaxial Planar Type

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS272TE85R 数据手册

1SS272

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS272

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-61

: V

z Low forward voltage

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 0.9pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300 (*)

100 (*)

2 (*)

FSM

Power dissipation

150

°C

Junction temperature

125

JEDEC

―

Storage temperature range

−55~125

stg

JEITA

SC−61

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

2−3J1A

Weight: 0.013g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(*) Unit rating. Total rating = Unit rating × 1.5.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

―

= 10mA

= 100mA

1.20

0.1

0.5

2.0

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MH

0.9

1.6

Reverse recovery time

I = 10mA, Fig.1

Marking

2007-11-01

12 3

下载PDF

与1SS272TE85R相关器件

型号	品牌	描述	获取价格	数据表
1SS277	HITACHI	Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch	获取价格
1SS277WT	SEMTECH	BAND SWITCHING DIODE	获取价格
1SS277WT	SWST	波段开关管	获取价格
1SS286	HITACHI	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching	获取价格
1SS286	RENESAS	Silicon Schottky Barrier Diode for Various Detector, High Speed Switching	获取价格
1SS286	EIC	Schottky Barrier Rectifiers	获取价格