1SS277WT
Silicon Epitaxial Planar Band Switching Diode
PINNING
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Applications
• Low loss band switching in VHF television tuners
• Surface mount band switching circuits
Top View
Simplified outline SOD-523 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
IF
35
100
V
Continuous Forward Current
Power Dissipation
mA
mW
Ptot
TJ
200
O
Junction Temperature
- 55 to + 125
- 55 to + 125
C
O
Storage Temperature Range
Tstg
C
Thermal Characteristics
Parameter
Thermal Resistance from Junction to Ambient 1)
Symbol
RθJA
Max.
500
Unit
/W
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Min.
-
Max.
1
Unit
Forward Voltage
at IF = 10 mA
V
V
Reverse Voltage
at IR = 10 µA
VR
IR
35
-
-
Reverse Current
at VR = 25 V
50
0.7
1.2
nA
Ω
Diode Forward Resistance
at IF = 2 mA, f = 100 MHz
rf
-
Capacitance
at f = 1 MHz, VR = 6 V
Cd
-
pF
1 / 3
®
Dated : 13/03/2023 Rev:01