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1SS272TE85L PDF预览

1SS272TE85L

更新时间: 2024-02-09 11:28:48
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
4页 222K
描述
DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode

1SS272TE85L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SC-61, 4 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.86
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
最大非重复峰值正向电流:2 A元件数量:2
相数:1端子数量:4
最高工作温度:125 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
最大反向恢复时间:0.004 µs反向测试电压:80 V
子类别:Other Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED

1SS272TE85L 数据手册

 浏览型号1SS272TE85L的Datasheet PDF文件第2页浏览型号1SS272TE85L的Datasheet PDF文件第3页浏览型号1SS272TE85L的Datasheet PDF文件第4页 
1SS272  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS272  
Unit: mm  
Ultra High Speed Switching Application  
z Low forward voltage  
: V  
= 0.92V (typ.)  
F (3)  
z Fast reverse recovery time: t = 1.6ns (typ.)  
rr  
z Small total capacitance  
: C = 0.9pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
1. CATHODE 1  
2. CATHODE 2  
3. ANODE 2  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
300 *  
100 *  
2 *  
mA  
mA  
A
FM  
4. ANODE 1  
I
O
I
FSM  
P
Power dissipation  
150 *  
125  
mW  
°C  
°C  
JEDEC  
Junction temperature  
T
j
JEITA  
SC61  
Storage temperature range  
T
55 to 125  
stg  
TOSHIBA  
23J1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 13 mg (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Unit rating. Total rating = Unit rating × 1.5.  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.61  
0.74  
0.92  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.2  
0.1  
0.5  
2.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.9  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I
= 10mA, Fig.1  
F
rr  
Start of commercial production  
1984-10  
1
2014-03-01  

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