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1N959C-1E3TR PDF预览

1N959C-1E3TR

更新时间: 2024-02-03 09:36:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
3页 177K
描述
Zener Diode

1N959C-1E3TR 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-7针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.29
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:6.5 ΩJESD-609代码:e3
元件数量:1最高工作温度:175 °C
最大功率耗散:0.5 W标称参考电压:8.2 V
子类别:Voltage Reference Diodes表面贴装:NO
端子面层:MATTE TIN最大电压容差:2%
工作测试电流:15 mABase Number Matches:1

1N959C-1E3TR 数据手册

 浏览型号1N959C-1E3TR的Datasheet PDF文件第1页浏览型号1N959C-1E3TR的Datasheet PDF文件第2页 
1N957B, -1 thru 1N992B, -1, e3 DO-35  
Silicon 500 mW Zener Diodes  
S C O T T S D A L E D I V I S I O N  
GRAPHS  
Voltage Temperature  
Coefficient %/oC  
mV Change /ºC  
TL – LEAD TEMPERATURE (oC) 3/8” FROM BODY or  
TA on FR4 PC BOARD  
NOMINAL ZENER VOLTAGE (VOLTS)  
FIGURE 1  
FIGURE 2  
POWER DERATING CURVE  
ZENER VOLTAGE TEMPERATURE  
COEFFICIENT vs. ZENER VOLTAGE  
PACKAGE DIMENSIONS  
All dimensions in: INCH  
mm  
FIGURE 3  
CAPACITANCE vs. ZENER VOLTAGE  
(TYPICAL)  
Copyright © 2005  
10-18-2005 REV C  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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