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1N6379RL4G PDF预览

1N6379RL4G

更新时间: 2024-02-15 10:25:28
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

1N6379RL4G 数据手册

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1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)  
APPLICATION NOTES  
RESPONSE TIME  
circuit layout, minimum lead lengths and placing the  
suppressor device as close as possible to the equipment or  
components to be protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitance  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 8.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 9. Minimizing this overshoot is very important in the  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. These devices have  
excellent response time, typically in the picosecond range  
and negligible inductance. However, external inductive  
effects could produce unacceptable overshoot. Proper  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be  
in error as the 10 ms pulse has a higher derating factor than  
the 10 ms pulse. However, when the derating factor for a  
given pulse of Figure 7 is multiplied by the peak power value  
of Figure 1 for the same pulse, the results follow the  
expected trend.  
TYPICAL PROTECTION CIRCUIT  
Z
in  
LOAD  
V
in  
V
L
V (TRANSIENT)  
in  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V (TRANSIENT)  
in  
V
L
V
L
V
in  
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT  
D
t
t
Figure 8.  
Figure 9.  
http://onsemi.com  
6
 

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