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1N6267ARL PDF预览

1N6267ARL

更新时间： 2024-02-29 17:13:21
品牌 Logo 应用领域
安森美 - ONSEMI 局域网测试二极管电视
页数 文件大小 规格书
8页 99K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE

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1N6267ARL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：O-PALF-W2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.1其他特性：HIGH RELIABILITY, UL RECOGNIZED , LOW IMPEDANCE
最大击穿电压：7.14 V最小击穿电压：6.45 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
标称参考电压：6.8 V子类别：Voltage Reference Diodes
表面贴装：NO技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：5%工作测试电流：10 mA
Base Number Matches：1

1N6267ARL 数据手册

 浏览型号1N6267ARL的Datasheet PDF文件第2页浏览型号1N6267ARL的Datasheet PDF文件第3页浏览型号1N6267ARL的Datasheet PDF文件第4页浏览型号1N6267ARL的Datasheet PDF文件第5页浏览型号1N6267ARL的Datasheet PDF文件第6页浏览型号1N6267ARL的Datasheet PDF文件第7页 
Unidirectional and Bidirectional  
GENERAL DATA IS APPLICABLE TO ALL  
SERIES IN THIS GROUP  
http://onsemi.com  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are ON  
Semiconductor’s exclusive, cost-effective, highly reliable Surmetic  
axial leaded package and are ideally-suited for use in communication  
systems, numerical controls, process controls, medical equipment,  
business machines, power supplies and many other  
industrial/consumer applications, to protect CMOS, MOS and Bipolar  
integrated circuits.  
MOSORB ZENER TVS  
6.2–250 VOLTS  
1500 WATT PEAK POWER  
5 WATTS STEADY STATE  
Specification Features:  
• Standard Voltage Range — 6.2 to 250 V  
• Peak Power — 1500 Watts @ 1 ms  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
• UL Recognition  
PLASTIC  
CASE 41A  
• Response Time is Typically < 1 ns  
ORDERING INFORMATION  
Device  
1.5KEXXXA  
Package  
CASE 41A  
CASE 41A  
Shipping  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
POLARITY: Cathode indicated by polarity band. When operated in  
zener mode, will be positive with respect to anode  
MOUNTING POSITION: Any  
500 Units/Box  
1.5KEXXXARL4  
Tape and Reel  
1500 Units/Reel  
1.5KEXXXCA  
Bidirectional  
CASE 41A  
500 Units/Box  
WAFER FAB LOCATION: Phoenix, Arizona  
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico  
1.5KEXXXCARL4 CASE 41A  
Bidirectional  
Tape and Reel  
1500 Units/Reel  
1N6XXXA  
CASE 41A  
CASE 41A  
500 Units/Box  
MAXIMUM RATINGS  
1N6XXXARL  
Tape and Reel  
1500 Units/Reel  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation (1)  
P
PK  
1500  
Watts  
@ T ≤ 25°C  
L
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
Steady State Power Dissipation  
P
D
5
Watts  
@ T ≤ 75°C, Lead Length = 3/8″  
L
Derated above T = 75°C  
50  
mW/°C  
L
Forward Surge Current (2)  
I
200  
Amps  
FSM  
@ T = 25°C  
A
Operating and Storage Temperature  
Range  
T , T  
J stg  
– 65 to  
+175  
°C  
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C  
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.  
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute  
maximum.  
Semiconductor Components Industries, LLC, 1999  
1
Publication Order Number:  
December, 1999 – Rev. 2  
1N6267A/D  
12345678

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