1N6080US

更新时间： 2024-11-19 03:52:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		整流二极管超快速恢复能力电源超快恢复二极管快速恢复二极管
页数	文件大小	规格书
3页	121K
描述
VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS

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技术参数
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1N6080US 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	MELF
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.46
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
应用：	ULTRA FAST RECOVERY POWER	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.5 V
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e0
最大非重复峰值正向电流：	175 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	155 °C	最大输出电流：	2 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	最大重复峰值反向电压：	100 V
最大反向恢复时间：	0.03 µs	子类别：	Rectifier Diodes
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N6080US 数据手册

1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability

applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated

rectifiers (T_EC=70ºC) in different package sizes with working peak reverse

voltages from 50 to 150 volts are hermetically sealed using voidless-glass

construction and an internal “Category I” metallurgical bond. These devices

are also available in axial-lead package configurations for through-hole

mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru

1N6081). Microsemi also offers numerous other rectifier products to meet

higher and lower current ratings with various recovery time speed requirements

including standard, fast and ultrafast device types in both through-hole and

surface mount packages.

Package “A”

(or “D-5A”)

Package “E”

(or “D-5B”)

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular 1N6073US to 1N6081US series

Voidless hermetically-sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 50 to 150 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance for higher power

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Options for screening in accordance with MIL-PRF-

19500/503 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or MSP prefix respectively , e.g.

MX6076, MV6079, MSP6081, etc.

Controlled avalanche with peak reverse power

capability

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Axial-leaded equivalents also available (see separate

data sheet for 1N6073 thru 1N6081)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

Storage Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073US-6075US, 75 Amps for 1N6076US-6078US,

and 175 Amps for 1N6079US-6081US at 8.3 ms half-

sine wave

Average Rectified Forward Current (I_O) at T_EC= +70^oC:

1N6073US thru 1N6075US: 3.0 Amps

1N6076US thru 1N6078US: 6.0 Amps

1N6079US thru 1N6081US: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073US thru 1N6075US: 0.85 Amps

1N6076US thru 1N6078US: 1.3 Amps

1N6079US thru 1N6081US: 2.0 Amps

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead finish.

•

MARKING: None

•

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 1N6073 thru 1N6075: 193 mg

1N6076 thru 1N6078: 539 mg

1N6079 thru 1N6081: 1100 mg

•

See package dimensions and recommended pad

layouts on last page for all three package sizes

•

Thermal Resistance (R_θ_JEC): 13^oC/W for 1N6073US-

6075US, 8.5^oC/W for 1N6076US-6078US, and

5.0^oC/W for 1N6079US-6081US

Solder temperature: 260^oC for 10 s (maximum)

1-17-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与1N6080US相关器件

型号	品牌	获取价格	描述	数据表
1N6081	MICROSEMI	获取价格	ULTRA FAST POWER RECTIFIERS
1N6081	SEMTECH	获取价格	RECTIFIER, up to 150V, 5A, 30ns
1N6081	NJSEMI	获取价格	ULTRA FAST POWER RECTIFIERS
1N6081US	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS POWER RECTIFIERS
1N6082	KNOX	获取价格	LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
1N6082	NJSEMI	获取价格	Diode Zener Single 4.3V 20% 400mW 2-Pin DO-7
1N6082A	MICROSEMI	获取价格	Zener Diode, 4.3V V(Z), 10%, 0.4W, Silicon, Unidirectional, DO-7, DO-7, 2 PIN
1N6082A	NJSEMI	获取价格	Diode Zener Single 4.3V 10% 400mW 2-Pin DO-7
1N6082ACO	AEROFLEX	获取价格	4.3V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DIE-1
1N6082AE3	MICROSEMI	获取价格	Zener Diode, 4.3V V(Z), 10%, 0.4W, Silicon, Unidirectional, DO-7, DO-7, 2 PIN

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