Datasheet > 1N5631B

1N5631B

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
4页	212K
描述
Trans Voltage Suppressor Diode, 1500W, 6.63V V(RWM), Unidirectional, 1 Element, Silicon, DO-13, HERMETIC SEALED, METAL PACKAGE-2

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1N5631B 数据手册

Silicon Avalanche Diodes

1500 Watt Metal Axial Leaded Transient Voltage Suppressors

1N56 Series

100

100%

Exponential wave-form

Square wave-pulse

50%

Permissable

area of

operation

0.1

0°C

5 °C

100°C

15 °C

200°C

100ns

1µs

10µs

100µs

1ms

10ms

Tamb °C

Pulse Time (tp)

Figure 1 - Peak Power Derating Curve

Figure 3 - Peak Pulse Power vs. Pulse Time

Peak pulse power in percent of 25ºC rating

20,000

10,000

1.0

Measured @

Zero Bias

6000

4000

2000

0.75

0.50

0.25

1000

800

600

400

200

Permissable

area of

Cj (pf)

operation

Measured at

Stand-Off

Voltage (V^R)

100

0°C

5 °C

100°C

15 °C

200°C

Tamb °C

1.0 2

510 20 05100 200

Figure 2 - Continuous D.C. Power Derating

CurveContinuous d.c. power dissipation

Reverse Voltage, Volts V(^BR)

Figure 4 - Typical Junction Capacitance

314

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