生命周期: | Transferred | 包装说明: | DIE-1 |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED, LOW NOISE |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JEDEC-95代码: | DO-35 | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 标称参考电压: | 11 V |
最大反向电流: | 0.05 µA | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
最大电压容差: | 5% | 工作测试电流: | 1 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5531B(DO35) | ETC |
获取价格 |
Low Voltage Avalanche Zener[Qual Data] |
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1N5531B(DO35)E3 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.25W, Silicon, Unidirectional, DO-35, |
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1N5531B-1 | CDI-DIODE |
获取价格 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
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1N5531B-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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1N5531B-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMET |
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1N5531B-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMET |
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1N5531B-1TR | MICROSEMI |
获取价格 |
暂无描述 |
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1N5531BBKPBFREE | CENTRAL |
获取价格 |
Zener Diode, |
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1N5531BCO | AEROFLEX |
获取价格 |
Zener Diode, 11V V(Z), 5%, Silicon, Unidirectional, DIE-1 |
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1N5531BD7 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.4W, Silicon, Unidirectional |
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