是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-XALF-W2 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.19 |
Is Samacsys: | N | 其他特性: | ULTRA LOW NOISE |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
最大动态阻抗: | 80 Ω | JEDEC-95代码: | DO-35 |
JESD-30 代码: | O-XALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.4 W | 认证状态: | Not Qualified |
标称参考电压: | 11 V | 子类别: | Voltage Reference Diodes |
表面贴装: | NO | 技术: | ZENER |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 5% | 工作测试电流: | 1 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANTXV1N5531B-1 | MICROSEMI |
功能相似 ![]() |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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JANTXV1N5531B | MICROSEMI |
功能相似 ![]() |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
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JANTX1N5531B-1 | MICROSEMI |
功能相似 ![]() |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5531B(DO35) | ETC |
获取价格 |
Low Voltage Avalanche Zener[Qual Data] |
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1N5531B(DO35)E3 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.25W, Silicon, Unidirectional, DO-35, |
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1N5531B-1 | CDI-DIODE |
获取价格 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
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1N5531B-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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1N5531B-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMET |
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1N5531B-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HERMET |
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1N5531B-1TR | MICROSEMI |
获取价格 |
暂无描述 |
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1N5531BBKPBFREE | CENTRAL |
获取价格 |
Zener Diode, |
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1N5531BCO | AEROFLEX |
获取价格 |
Zener Diode, 11V V(Z), 5%, Silicon, Unidirectional, DIE-1 |
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1N5531BD7 | MICROSEMI |
获取价格 |
Zener Diode, 11V V(Z), 5%, 0.4W, Silicon, Unidirectional |
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