Datasheet > 1N5404G

1N5404G

更新时间： 2024-05-23 22:21:19

品牌	Logo	应用领域
星海 - CZSTARSEA		/
页数	文件大小	规格书
2页	23K
描述
DO-201AD

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中文翻译

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数据手册

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1N5404G 数据手册

1N5400G THRU 1N5408G

GLASS PASSIVATED SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

FEATURES

DO-201AD

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

260 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

Glass passivated chip junction

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.04 ounce, 1.10 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

UNITS

5408G

5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

50 100 200 300 400 500 600 800 1000

35 70 140 210 280 350 420 560 700

VRRM

VRMS

VDC

50 100 200 300 400 500 600 800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I(AV)

3.0

IFSM

150

1.1

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

5.0

100

TA=100 C

Typical junction capacitance (NOTE 1)

RθJA

C/W

30.0

20.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-55 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T08B07A0

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与1N5404G相关器件

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1N5404-G	COMCHIP	获取价格	General Purpose Rectifier
1N5404G-B	DIODES	获取价格	3.0A GLASS PASSIVATED RECTIFIER
1N5404GB-G	COMCHIP	获取价格	Rectifier Diode,
1N5404G-E	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5404GH32-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GH35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GH36-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GH36-4	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404G-K	TSC	获取价格	3A, 50V - 1000V Glass Passivated Rectifier
1N5404GM	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A