Datasheet > 1N5404G-K

1N5404G-K

更新时间： 2024-11-24 00:59:39

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	268K
描述
3A, 50V - 1000V Glass Passivated Rectifier

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中文翻译

获取价格

数据手册

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1N5404G-K 数据手册

1N5400G-K - 1N5408G-K

Taiwan Semiconductor

3A, 50V - 1000V Glass Passivated Rectifier

FEATURES

KEY PARAMETERS

● Glass passivated chip junction

● High current capability, Low V_F

● High reliability

PARAMETER

I_F(AV)

V_RRM

VALUE

UNIT

50 - 1000

125

● High surge current capability

● Low power loss, high efficiency

● Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

I_FSM

T_{J MAX}

150

°C

Package

Configuration

DO-201AD

Single Die

APPLICATIONS

● High frequency rectification

● Freewheeling application

● Switching mode converters and inverters in computer and

telecommunication.

MECHANICAL DATA

● Case: DO-201AD

● Molding compound meets UL 94V-0 flammability rating

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: As marked

● Weight: 1.2 g (approximately)

DO-201AD

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408

PARAMETER

SYMBOL

UNIT

G-K

Marking code on the device

1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G

Repetitive peak reverse

voltage

Reverse voltage, total rms

value

Maximum DC blocking

voltage

V_RRM

100

200

140

200

400

280

600

420

600

800

560

800

1000

700

V_R(RMS)

V_DC

100

400

1000

Forward current

I_F(AV)

Surge peak forward current,

8.3 ms single half sine-wave

superimposed on rated load

per diode

I_FSM

125

Junction temperature

Storage temperature

T_J

- 55 to +150

°C

T_STG

Version:B1705

12 3 4 5 6

中文翻译

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与1N5404G-K相关器件

型号	品牌	获取价格	描述	数据表
1N5404GM	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5404GM21	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GM22	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GM24	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GP	MCC	获取价格	3 Amp Glass Passivated Rectifier 50 - 1000 Volts
1N5404GP	LUNSURE	获取价格	3 Amp Glass Passivated Rectifier 50-1000 Volts
1N5404GP-BP	MCC	获取价格	暂无描述
1N5404GP-BP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GP-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, ROHS CO
1N5404GR	SECOS	获取价格	Low forward voltage drop