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1N5404G-K PDF预览

1N5404G-K

更新时间: 2024-10-31 00:59:39
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页数 文件大小 规格书
6页 268K
描述
3A, 50V - 1000V Glass Passivated Rectifier

1N5404G-K 数据手册

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1N5400G-K - 1N5408G-K  
Taiwan Semiconductor  
3A, 50V - 1000V Glass Passivated Rectifier  
FEATURES  
KEY PARAMETERS  
Glass passivated chip junction  
High current capability, Low VF  
High reliability  
PARAMETER  
IF(AV)  
VRRM  
VALUE  
UNIT  
3
A
V
50 - 1000  
125  
High surge current capability  
Low power loss, high efficiency  
Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21  
IFSM  
A
TJ MAX  
150  
°C  
Package  
Configuration  
DO-201AD  
Single Die  
APPLICATIONS  
High frequency rectification  
Freewheeling application  
Switching mode converters and inverters in computer and  
telecommunication.  
MECHANICAL DATA  
Case: DO-201AD  
Molding compound meets UL 94V-0 flammability rating  
Packing code with suffix "G" means green compound  
(halogen-free)  
Terminal: Pure tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Weight: 1.2 g (approximately)  
DO-201AD  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408  
PARAMETER  
SYMBOL  
UNIT  
G-K  
G-K  
G-K  
G-K  
G-K  
G-K  
G-K  
Marking code on the device  
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G  
Repetitive peak reverse  
voltage  
Reverse voltage, total rms  
value  
Maximum DC blocking  
voltage  
VRRM  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
VR(RMS)  
VDC  
100  
400  
3
1000  
V
A
Forward current  
IF(AV)  
Surge peak forward current,  
8.3 ms single half sine-wave  
superimposed on rated load  
per diode  
IFSM  
125  
A
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
1
Version:B1705  

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