5秒后页面跳转
1N5404GP-TP PDF预览

1N5404GP-TP

更新时间: 2024-11-19 13:00:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 484K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5404GP-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.04
其他特性:LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5404GP-TP 数据手册

 浏览型号1N5404GP-TP的Datasheet PDF文件第2页浏览型号1N5404GP-TP的Datasheet PDF文件第3页浏览型号1N5404GP-TP的Datasheet PDF文件第4页 
M C C  
1N5400  
THRU  
1N5408  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Low Current Leakage and Low Forward Voltage  
3 Amp Rectifier  
50 - 1000 Volts  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
500V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5400  
1N5401  
1N5402  
1N5404  
1N5405  
1N5406  
1N5407  
1N5408  
1N5400  
1N5401  
1N5402  
1N5404  
1N5405  
1N5406  
1N5407  
1N5408  
35V  
70V  
140V  
280V  
350V  
50V  
100V  
200V  
400V  
500V  
A
Cathode  
Mark  
B
420V  
560V  
700V  
600V  
800V  
1000V  
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
Ta = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
INCHES  
MAX  
MM  
Forward Voltage  
VF  
IR  
1.0V  
IF= 3.0A;  
T = 25°C  
a
DIM  
A
B
C
D
MIN  
.287  
.189  
MIN  
7.30  
4.80  
1.20  
25.40  
MAX  
9.50  
5.30  
1.30  
---  
NOTE  
.374  
.208  
.052  
---  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
.048  
1.000  
5.0mA  
100mA  
Ta= 25°C  
Ta= 150°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 4  

与1N5404GP-TP相关器件

型号 品牌 获取价格 描述 数据表
1N5404GR SECOS

获取价格

Low forward voltage drop
1N5404G-T DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N5404-GT3 SENSITRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404GT-G COMCHIP

获取价格

Rectifier Diode,
1N5404GU DYELEC

获取价格

3 .0 AMPS. Glass Passivated Rectifiers
1N5404GU23 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404GV RECTRON

获取价格

GLASS PASSIVATED RECTIFIER
1N5404H32 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404H33 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
1N5404H34 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,