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1N5398/70 PDF预览

1N5398/70

更新时间: 2022-12-01 21:41:16
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 306K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

1N5398/70 数据手册

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1N5391 thru 1N5399  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Max.  
instantaneous  
forward voltage  
Test condition Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit  
at 1.5 A,  
TA = 70 °C  
VF  
1.4  
V
Maximum DC  
reverse current at  
rated DC blocking  
voltage  
TJ = 25 °C  
IR  
5.0  
300  
µA  
TJ = 150 °C  
Typical reverse  
recovery time  
at IF = 0.5 A,  
IR = 1.0 A,  
Irr = 0.25 A  
trr  
2.0  
15  
µs  
pF  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit  
Typical thermal resistance(1)  
RθJA  
RθJL  
55  
25  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
50  
40  
30  
20  
10  
0
2.0  
1.5  
TA = 75 °C  
8.3 ms Single Half Sine-Wave  
1.0  
0.5  
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
Number of Cycles at 60 Hz  
Lead Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88514  
20-Oct-05  
2

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