Datasheet > 1N5398/51

1N5398/51

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	306K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N5398/51 数据手册

1N5391 thru 1N5399

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Max.

instantaneous

forward voltage

Test condition Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit

at 1.5 A,

T_A= 70 °C

V_F

1.4

Maximum DC

reverse current at

rated DC blocking

voltage

T_J= 25 °C

I_R

5.0

300

µA

T_J= 150 °C

Typical reverse

recovery time

at I_F= 0.5 A,

I_R= 1.0 A,

I_rr= 0.25 A

t_rr

2.0

µs

Typical junction

capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 Unit

Typical thermal resistance⁽¹⁾

R_θJA

R_θJL

°C/W

Notes:

(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

2.0

1.5

TA = 75 °C

8.3 ms Single Half Sine-Wave

1.0

0.5

100

125

150

175

Number of Cycles at 60 Hz

Lead Temperature (°C)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88514

20-Oct-05

123 4

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1N5398/54	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,	获取价格
1N5398/56	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,	获取价格
1N5398/58	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,	获取价格
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1N5398/64	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,	获取价格
1N5398/65	VISHAY	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,	获取价格