1N5376B-BP-HF

更新时间： 2024-01-10 17:45:59

品牌	Logo	应用领域
美微科 - MCC		二极管齐纳二极管测试
页数	文件大小	规格书
6页	637K
描述
Zener Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5376B-BP-HF 技术参数

生命周期：	Obsolete	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.64	Is Samacsys：	N
其他特性：	FORMED LEAD OPTIONS ARE AVAILABLE	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	认证状态：	Not Qualified
标称参考电压：	87 V	最大反向电流：	0.5 µA
表面贴装：	NO	技术：	ZENER
端子形式：	WIRE	端子位置：	AXIAL
最大电压容差：	5%	工作测试电流：	15 mA
Base Number Matches：	1

1N5376B-BP-HF 数据手册

M C C

Micro Commercial Components

1N5348BE THRU 1N5388BE

ELECTRICAL CHARACTERISTICS

3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave

current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge

current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on

logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting

℃

contact located as specified in Note 3. (T_A=25 ).

4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made

at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the

same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40 10 ms.

(T_A=25 ). Mounting contact located as specified in Note2.

5. MAXIMUM REGULATOR CURRENT (I_ZM) - The maximum current shown is based on the maximum voltage of a

5% type unit. Therefore, it applies only to the B-suffix device. The actual I_ZMfor any device may not exceed the

value of 5 watts divided by the actual Vz of the device. T_L=75 at maximum from the device body.

APPLICATION NOTE:

of P_Dand the extremes of T_J(T_J) may be estimated.

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to

determine junction temperature under any set of

operating conditions in order to calculate its value. The

following procedure is recommended:

Changes in voltage, Vz, can then be found from:

, the zener voltage temperature coefficient, is fount

from Figures 2.

Lead Temperature, T_L, should be determined from:

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly be

the zener resistance. For best regulation, keep current

excursions as low as possible.

T_L=th _LAP_D+ T_A

th _LAis the lead-to-ambient thermal resistance ( /W)

and P_Dis the power dissipation.

Junction Temperature, T_J, may be found from:

T_J= T_L+ T_JL

Data of Figure 3 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They

are lower than would be expected by considering only

junction temperature, as current crowding effects cause

temperatures to be extremely high in small spots resulting

in device degradation should the limits of Figure. 5 be

exceeded.

T_JLis the increase in junction temperature above the

lead temperature and may be found from Figure 3 for a

train of power pulses or from Figure 4 for dc power.

T_JL

= _JLP_D

For worst-case design, using expected limits of Iz, limits

www.mccsemi.com

Revision: 6

2006/05/28

3 of 6

1 234 5 6

中文翻译

下载PDF

与1N5376B-BP-HF相关器件

型号	品牌	获取价格	描述	数据表
1N5376BE	MCC	获取价格	5 Watt Zener Diode 11 to 200 Volts
1N5376BE3	MICROSEMI	获取价格	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
1N5376BE3/TR	MICROSEMI	获取价格	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
1N5376BE3/TR13	MICROSEMI	获取价格	Zener Diode,
1N5376BE3/TR7	MICROSEMI	获取价格	Zener Diode
1N5376BE3TR	MICROSEMI	获取价格	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P
1N5376BEB	MCC	获取价格	Zener Diode, 87V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE, PLASTIC PACKAGE-2
1N5376BE-T	MCC	获取价格	Zener Diode,
1N5376BE-TP	MCC	获取价格	Zener Diode,
1N5376BG	ONSEMI	获取价格	5 Watt Surmetic TM 40 Zener Voltage Regulators

与1N5376B-BP-HF相关文章

压敏电阻器在直流电路中的过压保护应用探讨
2024-06-07

2
电感耐压值及其与电感大小的关系
2024-06-07

5
CNY17F光耦合器：特性、应用、封装、引脚功能及替换型号解析
2024-06-07

4
DS1307资料解析：特性、引脚说明、替代推荐
2024-06-07

3

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5376B-BP-HF

1N5376B-BP-HF 技术参数

1N5376B-BP-HF 数据手册

与1N5376B-BP-HF相关器件

与1N5376B-BP-HF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5376B-BP-HF

1N5376B-BP-HF 技术参数

1N5376B-BP-HF 数据手册

与1N5376B-BP-HF相关器件

与1N5376B-BP-HF相关文章

您还可以找

您在本页遇到什么问题？