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1N5356BRLG

更新时间: 2024-01-13 06:00:46
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试PC
页数 文件大小 规格书
8页 83K
描述
5 Watt Surmetic TM 40 Zener Voltage Regulators

1N5356BRLG 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.64其他特性:FORMED LEAD OPTIONS ARE AVAILABLE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified标称参考电压:19 V
最大反向电流:0.5 µA表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:5%
工作测试电流:65 mABase Number Matches:1

1N5356BRLG 数据手册

 浏览型号1N5356BRLG的Datasheet PDF文件第2页浏览型号1N5356BRLG的Datasheet PDF文件第3页浏览型号1N5356BRLG的Datasheet PDF文件第4页浏览型号1N5356BRLG的Datasheet PDF文件第5页浏览型号1N5356BRLG的Datasheet PDF文件第6页浏览型号1N5356BRLG的Datasheet PDF文件第8页 
1N5333B Series  
100  
10  
1
0.1  
80  
100  
120  
140  
160  
180  
200  
220  
V , ZENER VOLTAGE (VOLTS)  
Z
Figure 9. Zener Voltage versus Zener Current  
VZ = 82 thru 200 Volts  
APPLICATION NOTE  
Since the actual voltage available from a given Zener  
diode is temperature dependent, it is necessary to determine  
junction temperature under any set of operating conditions  
in order to calculate its value. The following procedure is  
recommended:  
For worst-case design, using expected limits of I , limits  
Z
of P and the extremes of T (DT ) may be estimated.  
D
J
J
Changes in voltage, V , can then be found from:  
Z
DV = qVZ DTJ  
q
, the Zener voltage temperature coefficient, is found  
VZ  
Lead Temperature, T , should be determined from:  
L
from Figures 2 and 3.  
TL = qLA PD + TA  
Under high power-pulse operation, the Zener voltage will  
vary with time and may also be affected significantly by the  
zener resistance. For best regulation, keep current  
excursions as low as possible.  
q
is the lead-to-ambient thermal resistance and P is the  
D
LA  
power dissipation.  
Junction Temperature, T , may be found from:  
J
TJ = TL + DTJL  
Data of Figure 4 should not be used to compute surge  
capability. Surge limitations are given in Figure 5. They are  
lower than would be expected by considering only junction  
temperature, as current crowding effects cause temperatures  
to be extremely high in small spots resulting in device  
degradation should the limits of Figure 5 be exceeded.  
DT is the increase in junction temperature above the lead  
temperature and may be found from Figure 4 for a train of  
power pulses or from Figure 1 for dc power.  
JL  
DTJL = qJL PD  
http://onsemi.com  
7

1N5356BRLG 替代型号

型号 品牌 替代类型 描述 数据表
1N5356BG ONSEMI

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1N5356BRL ONSEMI

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